Allicdata Part #: | IPP06CN10NG-ND |
Manufacturer Part#: |
IPP06CN10N G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 100A TO-220 |
More Detail: | N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG... |
DataSheet: | IPP06CN10N G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 180µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 214W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9200pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 139nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IPP06CN10N G is a common component of Transistors, FETs and MOSFETs - Single. It is a discrete component used in various electronic circuits. It is an N-channel MOSFET which is best known for its low on-resistance and low reverse recovery characteristics. It has a variety of potential applications ranging from powering LED lighting to high-frequency switching.
The key feature of IPP06CN10N G is its low on-resistance, which is ideal for driving loads with relatively low power levels. In addition, the component has a wide range of operating voltages, which makes it suitable for use in a variety of environments. Furthermore, the component has fast switching speeds, enabling it to respond quickly to changes in input conditions.
The principle of operation of IPP06CN10N G is determined by the physical structure of the component. The component consists of two silicon layers, between which are sandwiched a conductive gate. When a voltage is applied to the gate, the two silicon layers will provide a path for current to flow. This causes a charge to build up in the gate, which in turn builds up a potential at the source. This potential can then be used to drive current through the component.
The application field of IPP06CN10N G is quite broad - it can be used for a variety of purposes. It is particularly well suited for use in switching circuits and solid-state lighting systems. It is also often used for driving low power loads such as relays and LEDs. In addition, the component can be used for signal processing and switching between power sources. It is also frequently incorporated into linear regulators.
In summary, IPP06CN10N G is a component of Transistors, FETs and MOSFETs - Single. It is known for its low on-resistance and wide range of operating voltages. The component works on the principle of the buildup of a potential between two silicon layers when a voltage is applied to the gate. Its application field is broad and includes driving low-power loads, signal processing, switching between power sources and more.
The specific data is subject to PDF, and the above content is for reference
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