IPP06CN10N G Allicdata Electronics
Allicdata Part #:

IPP06CN10NG-ND

Manufacturer Part#:

IPP06CN10N G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 100A TO-220
More Detail: N-Channel 100V 100A (Tc) 214W (Tc) Through Hole PG...
DataSheet: IPP06CN10N G datasheetIPP06CN10N G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 180µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 214W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IPP06CN10N G is a common component of Transistors, FETs and MOSFETs - Single. It is a discrete component used in various electronic circuits. It is an N-channel MOSFET which is best known for its low on-resistance and low reverse recovery characteristics. It has a variety of potential applications ranging from powering LED lighting to high-frequency switching.

The key feature of IPP06CN10N G is its low on-resistance, which is ideal for driving loads with relatively low power levels. In addition, the component has a wide range of operating voltages, which makes it suitable for use in a variety of environments. Furthermore, the component has fast switching speeds, enabling it to respond quickly to changes in input conditions.

The principle of operation of IPP06CN10N G is determined by the physical structure of the component. The component consists of two silicon layers, between which are sandwiched a conductive gate. When a voltage is applied to the gate, the two silicon layers will provide a path for current to flow. This causes a charge to build up in the gate, which in turn builds up a potential at the source. This potential can then be used to drive current through the component.

The application field of IPP06CN10N G is quite broad - it can be used for a variety of purposes. It is particularly well suited for use in switching circuits and solid-state lighting systems. It is also often used for driving low power loads such as relays and LEDs. In addition, the component can be used for signal processing and switching between power sources. It is also frequently incorporated into linear regulators.

In summary, IPP06CN10N G is a component of Transistors, FETs and MOSFETs - Single. It is known for its low on-resistance and wide range of operating voltages. The component works on the principle of the buildup of a potential between two silicon layers when a voltage is applied to the gate. Its application field is broad and includes driving low-power loads, signal processing, switching between power sources and more.

The specific data is subject to PDF, and the above content is for reference

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