Allicdata Part #: | IPP09N03LAIN-ND |
Manufacturer Part#: |
IPP09N03LA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 50A TO-220AB |
More Detail: | N-Channel 25V 50A (Tc) 63W (Tc) Through Hole PG-TO... |
DataSheet: | IPP09N03LA Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 20µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1642pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 9.2 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IPP09N03LA is a type of MOSFET transistors. This transistor is a part of the family of single-packaged Field-Effect Transistors (FETs) and it is a small package with a 9mmÔÇØ 9mm footprint and a 0.45mm thickness. It features N-channel MOSFETs, with an on-state resistance of 270mΩ and a breakdown voltage of 30V. The power dissipation is 3.2 W while the absolute maximum drain-source voltage is 25 V. This transistor provides high system integration and power density, while being easy to use and configure.
The main application field of IPP09N03LA is power supply design, as it is specifically designed for low voltage SMPS (switched mode power supplies). It also offers excellent current handling and very low on-resistance and gate charge with low power dissipation. This makes it very suitable for use in highly efficient, general-purpose switch designs. The other application fields are: DC/DC converters, low-voltage motor control, audio amplifiers, load switching, relay and solenoid control, and home appliances.
The working principle of IPP09N03LA is based on MOS-transistor technology. It uses an insulated gate to control the flow of current between the source and the drain of the transistor. The gate voltage (VG) provides the control of the current flow between the drain and the source (ID). When a positive gate voltage is applied, a depletion layer forms around the gate and the current flow is blocked. By increasing the gate voltage, the depletion layer becomes thicker, resulting in the current flow decreasing until it reaches zero.
The IPP09N03LA also uses a specific technology to keep the current flow stable. This is called Source-Drain Shunting. When the source-drain current reaches a predetermined value, the transistor switches its gate off automatically, thus limiting the current flow. This impedance control technology is used in many applications such as load switching, relay, and solenoid control.
The IPP09N03LA is an effective and efficient transistor for a variety of applications, thanks to its high-efficiency operation, low on-resistance and gate charge, and small footprint. It is ideal for applications involving SMPS, DC/DC converters, and low-voltage motor control. Its excellent current handling and high level of system integration make it a great choice for powering a variety of devices.
The specific data is subject to PDF, and the above content is for reference
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