IPP052N06L3GXKSA1 Allicdata Electronics
Allicdata Part #:

IPP052N06L3GXKSA1-ND

Manufacturer Part#:

IPP052N06L3GXKSA1

Price: $ 1.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 80A TO220-3
More Detail: N-Channel 60V 80A (Tc) 115W (Tc) Through Hole PG-T...
DataSheet: IPP052N06L3GXKSA1 datasheetIPP052N06L3GXKSA1 Datasheet/PDF
Quantity: 463
1 +: $ 1.01430
10 +: $ 0.89838
100 +: $ 0.71001
500 +: $ 0.55062
1000 +: $ 0.43470
Stock 463Can Ship Immediately
$ 1.11
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 115W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPP052N06L3GXKSA1 is an N-Channel MOSFET (metal-oxide semiconductor field-effect transistor), part of the company Infineon\'s family of products known as CoolMOS. It is designed for applications requiring a maximum drain current of up to 52A and drain-source voltage up to 600V, making it suitable for a wide range of usage.

MOSFETs are a type of transistor that control electron flow through a gate made of resistive material supported by an electrical potential. A high potential on the gate terminal, relative to the source terminal, forces electrons to flow through the gate and onto the drain terminal. This is known as the depletion region. This flow of electrons produces an electric current. Conversely, a low potential on the gate terminal causes the depletion region to collapse, stopping electron flow and thus the current.

An important factor to consider with MOSFETs is their ability to efficiently convert electricity into current with very little energy lost as heat. This reduces power consumption and helps to conserve resources. The IPP052N06L3GXKSA1 is highly efficient and is rated for up to 95% current conversion, making it ideal for applications requiring high power without the need to dissipate large amounts of heat.

MOSFETs can be used in a number of applications, from power supply switching to audio amplifiers. The IPP052N06L3GXKSA1 is designed for use in high-power switching. It is suitable for use in automotive, home appliance, and industrial applications as it combines high current handling capabilities with low switching losses for highest performance. It is suitable for use as a switch in DC-DC converters, motor drives, and other high current applications.

The IPP052N06L3GXKSA1 is built to last, with a package that is designed to be both durable and reliable. It features a unique package with low profile and small size, allowing it to fit into cramped spaces while still providing high current handling capabilities. The device is also protected against electrostatic discharge, making it ideal for use in environments where there is a high risk of such events.

In conclusion, the IPP052N06L3GXKSA1 is an ideal choice for high-power switching applications. Its combination of high current handling capabilities with low switching losses makes it a reliable and cost-effective solution. The device is also easy to install and is protected against electrostatic discharge, making it suitable for use in a wide range of applications. Its low profile and small size make it well-suited for use in cramped spaces, further increasing its versatility.

The specific data is subject to PDF, and the above content is for reference

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