IPP04N03LB G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPP04N03LB G is a part of the family of n-channel Field Effect Transistors (FETs). It is a single FET that is designed to operate in either a power amplifier or switching application.

A FET is a type of transistor which uses a voltage or current between its terminals to control the flow of electric current through a channel between its terminals. An n-channel FET is one in which electrons are the charge carriers which flow in the channel between the terminals.

The IPP04N03 LBG is an n-channel FET which is designed for use in either power amplifying (PA) or switching applications. It has a maximum drain current of 4 A, a maximum drain voltage of 40 V, a maximum gate-source voltage of 10 V, and a maximum gate-drain voltage of 10 V. The part is also specified for operation up to a maximum temperature of 150ºC.

The IPP04N03LB G can be used in either a power amplifier application or a switching application. In a power amplifier application, the device is used to amplify the power output of an amplifier. The IPP04N03LB G can also be used as a switch, allowing current to flow or not flow through its channel depending on the voltage or current applied to its gate.

The working principle of the IPP04N03LB G is based on the fact that the n-channel FET has a built-in electric field that controls the flow of electrons between the source and drain. The voltage or current applied to the gate controls the electric field, thus controlling the flow of electrons. The larger the voltage or current applied to the gate, the more current that can flow through the channel.

When the IPP04N03LB G is used in a power amplifier application, the device amplifies the power output of the amplifier by controlling the flow of current through its channel. The voltage or current applied to the gate is used to control the current flow through the channel, thus increasing or decreasing the output power of the amplifier. In a switching application, the IPP04N03LB G is used to control the flow of current through its channel. Applying a voltage or current to the gate will either allow or prevent current from flowing through the channel.

The IPP04N03LB G is a member of the n-channel FET family and is designed to operate in either a power amplifier or switching application. It has a maximum drain current of 4 A, a maximum drain voltage of 40 V, and a maximum gate-source and gate-drain voltage of 10 V. The device is also rated to operate up to a maximum temperature of 150ºC. The device works by controlling the electric field in the channel between its source and drain, allowing it to either amplify power or act as a switch, depending on the application.

The specific data is subject to PDF, and the above content is for reference