IPP07N03LB G

Vgs(th) (Max) @ Id:	2V @ 40µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	94W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2782pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	25nC @ 5V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	6.6 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IPP07N03LBG is a N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that uses a single channel. It is ideally suited for low voltage applications and is often used in portable electrical and electronic devices. Its maximum ratings include a drain source voltage of 5V and a drain current of 30A. MOSFETs are widely used in nearly all analog, mixed-signal, and digital circuits or applications including power regulation and switching, as well as communication and multimedia. One of the most common applications of MOSFETs is to drive loads with high power efficiency. The IPP07N03LBG is widely used in these applications and can provide a very efficient way to transfer power while minimizing power loss.The IPP07N03LBG has three pins; gate, drain, and source. The gate pin provides the control signal, which determines the amount of current flowing from the drain to the source. The drain receives the current from the gate, and the source provides ground for the current to discharge. The gate voltage and the current between the drain and source will determine the output from the MOSFET device. When a low gate voltage is applied, the drain–source current will be low and vice versa.The working principle of the IPP07N03LBG is fairly simple. In the "off" state, the device does not have any current flowing through it. This is because the gate–source voltage (Vgs) is below the threshold voltage (Vth), which means that the metal oxide semiconductor layer prevents current from flowing. When a voltage above Vth is applied to the gate, the MOSFET enters its "on" state and current is allowed to flow between the drain and the source.The IPP07N03LBG MOSFET has a fast switching characteristic with low on-state resistance that makes it perfect for applications such as DC/DC converter regulation and power amplification. Its on-state resistance is low, so the circuit is more efficient since less energy is needed to switch between on and off states; this makes it an ideal choice for power switching applications such as switch-mode power supplies and inverters. The IPP07N03LBG is also suitable for power-efficient circuits when it comes to dc motor control. Its high speed switching characteristics can also come in handy in motor control applications where motor control speed is of utmost importance. In this application, the MOSFET can be used to regulate the amount of voltage being supplied to the motor in order to control its speed.Finally, the IPP07N03LBG is an excellent choice for use in industrial applications. Its low on-state resistance and high speed switching makes it an ideal choice for a multitude of industrial applications. This includes but is not limited to, controller and module controls, pressure sensors, temperature sensors, flow control valves, and switch mode power supplies.In summary, the IPP07N03LBG is an excellent choice for any application requiring power control due to its low on-state resistance, fast switching time, and low gate-source voltage. Its use in industrial and motor control applications make it ideal for a variety of scenarios. The IPP07N03LBG makes a great choice for anyone looking for an efficient, reliable, and cost-effective way to regulate or switch power.

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