| Allicdata Part #: | IPP030N10N5AKSA1-ND |
| Manufacturer Part#: |
IPP030N10N5AKSA1 |
| Price: | $ 3.98 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH TO220-3 |
| More Detail: | N-Channel 100V 120A (Tc) 250W (Tc) Through Hole PG... |
| DataSheet: | IPP030N10N5AKSA1 Datasheet/PDF |
| Quantity: | 411 |
| 1 +: | $ 3.61620 |
| 10 +: | $ 3.22686 |
| 100 +: | $ 2.64606 |
| 500 +: | $ 2.14268 |
| 1000 +: | $ 1.80708 |
| Vgs(th) (Max) @ Id: | 3.8V @ 184µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | PG-TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10300pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 139nC @ 10V |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 3 mOhm @ 100A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IPP030N10N5AKSA1 is a N-Channel MOSFET transistor made by Infineon. It is a silicon-based transistor and is one of the most common types of transistors on the market today. This type of MOSFET transistor can be found in a wide variety of consumer electronics, from radios to televisions to computers and more. Its application field and working principle will be discussed in this article.The IPP030N10N5AKSA1 is a vertical power MOSFET with an isolation region between the source and the drain. It operates in the enhancement mode, meaning that a voltage must be applied to open the channel between the source and the drain. Once the voltage is applied, current can flow through the channel, allowing electricity to pass through.The main application field of the IPP030N10N5AKSA1 is in switching power supplies, with the transistor being used for high-power applications such as power distribution and robotics. The transistor is also able to handle large amounts of current, making it suitable for use with high-power devices such as motors. Its working principle is simple: when a voltage is applied to the gate of the transistor, it opens the channel between the source and the drain and allows current to flow.Because of its high power rating and ability to handle high current, the IPP030N10N5AKSA1 is ideal for use in a variety of devices, such as power distribution systems, motor drives, and robotics. The transistor can handle high speeds of operation, making it ideal for use in high speed applications such as motor drives and robotics. It is also able to handle high voltages, making it a great choice for applications where high voltages are required.The IPP030N10N5AKSA1 is a cost-effective solution for applications that require a high-power, high-speed transistor. It is highly reliable, making it a good choice for a wide range of applications. Its ability to handle large amounts of current, as well as its cost-effectiveness, make it a great choice for those who are looking for a reliable and affordable solution for their power distribution or robotics applications.In conclusion, the IPP030N10N5AKSA1 is a vertical power MOSFET with an isolation region between the source and the drain. It operates in the enhancement mode, meaning that a voltage must be applied to open the channel between the source and the drain. Once the voltage is applied, current can flow through the channel, allowing electricity to pass through. Its applications include switching power supplies, motor drives, power distribution systems, and robotics. It is a cost-effective solution for applications that require a high-power, high-speed transistor, and its ability to handle high currents and voltages make it a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IPP030N10N5AKSA1 Datasheet/PDF