IPP060N06NAKSA1

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IPP060N06NAKSA1 is an N-channel enhancement-mode mosfet that belongs to the High Voltage series of Power MOSFETs from International Rectifier.

This device operates from a drain source voltage of up to 600 volts and is fully specified for continuous drain source voltages up to 600 volts.

The device is equipped with an ultra-low on-resistance of 0.06ohmtyp.

The IPP060N06NAKSA1 is especially suited for applications such as switch mode power supplies, motor speed controls, HVAC chillers, power supply design, power back-up supplies and hot-swap controllers.

The basic construction of a Power MOSFET is fairly simple. It consists of a metal oxide layer sandwiched between two terminals known as the drain and the source. The metal oxide layer is referred to as an insulated gate and is also referred to as a channel.

The channel is designed to allow current to flow from the drain to the source, when a voltage is applied to the gate. This process of applying a voltage to the gate is called biasing.

The device’s biasing is determined by two factors- the gate-source voltage and the drain-source voltage. The gate-source voltage is the difference between the voltage at the gate and the voltage at the source and is usually given as a negative value.

The higher the gate-source voltage, the stronger the devices is biased, so it can handle higher current. The maximum drain current will also depend on the total gate-source resistance and the total drain-source resistance.

The amount of drain current also increases with the drain-source voltage, as more voltage is applied at the gate causing a greater bias.

When the gate-source voltage is held constant and the drain-source voltage increases, the current decreases proportionally owing to the decreased drain-source resistance.

The IPP060N06NAKSA1 has a maximum drain-source voltage of 600 volts and a gate-source voltage of 10 volts. This means that the device can operate at up to 600 volts and can handle a maximum of 20 amps.

In order to keep the transition from on to off as fast as possible, the device is designed to have a low gate-source capacitance. This means that it requires minimal current to turn the device on or off and it is able to switch its output from on to off quickly.

In addition to its low on-resistance and fast switching speeds, the IPP060N06NAKSA1 also features an integrated reverse-blocking diode. This allows the device to protect itself against reverse current and short-circuit-related damage.

The device also features an enhanced Avalanche Ruggedness (ear) rating which ensures the device is able to withstand higher voltage operational spikes.

Overall, the IPP060N06NAKSA1 is well-suited for applications such as switch mode power supplies, motor speed controls, HVAC chillers, power supply design, power back-up supplies and hot-swap controllers.

The device’s impressive electrical properties and integrated protection mechanisms make it a great choice for designers looking for a reliable and efficient solution for their power application needs.

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