Allicdata Part #: | IPP080N06NG-ND |
Manufacturer Part#: |
IPP080N06N G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 80A TO-220 |
More Detail: | N-Channel 60V 80A (Tc) 214W (Tc) Through Hole PG-T... |
DataSheet: | IPP080N06N G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 214W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3500pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 93nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IFP080N06N G is a six-channel low-side MOSFET driver with a pre-drivers feature and integrated power surge protection. This device is designed to efficiently drive and protect external N-Channel MOSFETs in applications such as automotive DC-DC & AC supplies, battery chargers, and general lighting where short rise and fall times are required.
MOSFET technology is a more efficient and smaller alternative to traditional transistor technology. By leveraging the benefits of MOSFETs, the IFP080N06N G is able to improve system performance and reduce size, cost, and power consumption compared to other technologies. The device utilizes advanced current ditch architecture which reduces dynamic turn-on losses, increases performance, and maximizes efficiency. Additionally, the device features integrated protection features such as overtemperature, undervoltage, and overvoltage protection.
In terms of its application field, the IFP080N06N G is suitable for automotive, industrial, and power supply applications. It is designed to drive external N-Channel MOSFETs for use in applications such as DC-DC and AC power supplies, battery chargers, and general lighting. It is also used in a variety of other applications including solar and alternative energy systems, motor control, high-side drive for buck converters, and automotive lighting.
As for the working principle of the IFP080N06N G, in a nutshell, it essentially works by utilizing the output of an integrated logic circuit to activate the gate of an N-Channel MOSFET. It essentially acts as a switch, which can be used to control the flow of current in an electrical circuit. When the integrated logic circuit sends an activating signal to the gate of the MOSFET, it turns on the MOSFET and allows current to flow through the circuit. When it sends a deactivating signal, the MOSFET turns off and stops the current flow.
The IFP080N06N G is a unique device with a number of features that set it apart from other MOSFET drivers. It utilizes advanced current ditch architecture which reduces dynamic turn-on losses for improved performance, and it also has integrated protection features such as overtemperature, undervoltage, and overvoltage protection. It is suitable for a wide range of applications, from automotive to industrial and power supply applications. Thanks to its advanced design and features, the IFP080N06N G is an ideal device for improving system performance and efficiency in a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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