IPP080N03L G

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The IPP080N03L G is a three-terminal normally-off enhancement-type metal-oxide-semiconductor field-effect transistor (MOSFET) commonly known as a “Power FET”. It is used in various applications, such as automotive, computers, industrial, and consumer electronics. This device features an ultra-low on-state resistance for low gate drive power, dynamic dV/dt ratings, and a fast body diode.

The Power FET utilizes the principle of majority-carrier-conduction in a metal-oxide-semiconductor layer between the gate and the source, to control the current flow between the drain and the source. The application of a gate voltage creates a gate field, which results in a potential barrier between the drain and the source. This potential barrier modulates the current flow between the drain and the source. This modulation allows current to flow when the gate voltage is increased beyond a certain “turn-on” threshold, and the device is enabled.

The application of a gate voltage to the drain side acts as a transistor in which the drain current is regulated through modulation of the potential barrier between the drain and the source, and is regulated by the gate voltage applied to the gate. The gate voltage is inversely proportional to the source/drain voltage, so when the gate voltage is increased, the potential barrier between the drain and the source reduces, permitting higher current flow. Conversely, when the gate voltage is decreased, the potential barrier increases and the current flow is reduced.

The IPP080N03L G Power FET is characterized by a low gate charge, low gate-source capacitance, low “on-state” resistance, fast switching, and an excellent thermal performance. The device is designed for use in switched-mode power supplies, DC/DC converters, high-side and low-side switches, and motor control systems. Its use in consumer electronics such as digital cameras and portable devices has enabled improved power efficiency and longer battery life. The device also finds use in automotive and industrial applications, as it is able to operate over a wide temperature range, from -55°C to 150°C.

Due to its low “on-state” resistance and highSwitching speed, the IPP080N03L G Power FET is an excellent choice for applications requiring high power delivery. The device is designed to operate at high temperatures allowing it to handle large thermal loads. The device also features excellent ESD protection to prevent the device’s failure due to electrostatic discharge.

In summary, the IPP080N03L G Power FET is a three-terminal normally-off enhancement-type MOSFET. It is characterized by low gate charge and capacitance, low “on-state” resistance, and fast switching, and can operate over a wide temperature range. It is commonly used in switched-mode power supplies, DC/DC converters, high-side and low-side switches, motor control systems, consumer electronics, automotive and industrial applications.

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