IPP80N03S4L04AKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPP80N03S4L04AKSA1 is a type of Field-Effect Transistor (FET). FETs are a type of transistor that are normally used in a wide range of electrical engineering applications. The IPP80N03S4L04AKSA1 is a MOSFET, a type of FET that is especially useful for applications that require both high power and high speed switching. It is a single FET, meaning it is comprised of a single N-channel silicon body.

A FET\'s structure is similar to that of a normal transistor and consists of three parts: a source, a drain and a gate. The source and the drain are two terminals through which current can flow, while the gate is used to control the amount of current flowing through the source and drain. The gate is insulated from the source and drain by a thin layer of silicon dioxide, meaning that no electrical current can flow between the gate and the source and drain.

The IPP80N03S4L04AKSA1 has a maximum drain-source voltage of -80V, meaning that it is capable of delivering a very high voltage across the circuit. It also has a maximum drain current of 30A, meaning that it is capable of delivering a very high current. Additionally, the maximum power dissipation of this device is 150W, meaning devices of this type can be used for very high power applications. Finally, the maximum junction temperature of this device is 150°C, indicating that it can be used for applications that require extreme temperatures.

The IPP80N03S4L04AKSA1 MOSFET has a wide range of applications. It can be used in power supplies, motor control circuits, audio power amplifiers, inverters, and high-power switching applications. Additionally, it is often used in situations where high power, fast switching, and precise control are required. The IPP80N03S4L04AKSA1 is especially useful for applications that require a high frequency of switching, since it has very low input and output capacitance, meaning it can switch quickly without having to wait for charges to build up.

The working principle of a FET is fairly simple. When the gate voltage is higher than the source voltage, current begins to flow from the source to the drain. This is because when the gate voltage is higher than the source voltage, electrons are attracted from the source to the gate, allowing them to flow through the channel between the drain and the source. The higher the gate voltage, the more current flows through the channel. The current through the device is controlled by the gate-source voltage and is proportional to the gate voltage.

The IPP80N03S4L04AKSA1 MOSFET is a device that has a wide range of applications. It is especially useful in high-power, high-speed switching applications, since it has a maximum drain-source voltage of -80V, a maximum drain current of 30A, and a maximum junction temperature of 150°C. Additionally, its working principle is fairly simple and is based on the idea that when the gate voltage is higher than the source voltage, current flows from the source to the drain.

The specific data is subject to PDF, and the above content is for reference