IPP80N08S406AKSA1

Vgs(th) (Max) @ Id:	4V @ 90µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	150W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4800pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	70nC @ 10V
Series:	Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs:	5.8 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IPP80N08S406AKSA1 is a type of single-device power metal-oxide-semiconductor field-effect transistor (MOSFET) used in a variety of applications. This article will discuss its application fields, working principles, characteristics, as well as its rating and packaging details. Application FieldsDue to its robust structure and reliable operation, the IPP80N08S406AKSA1 MOSFET is widely used in the fields of power electronics and motor control. It is especially suitable for use in various power applications due to its high thermal rating and a wide operating voltage range of 30--60 V. It is widely seen in voltage-limited applications such as welding, automotive battery management, power supplies, laptop power management, DC power conversion and motor control.Working PrincipleThe IPP80N08S406AKSA1 utilizes the three-terminal design common among MOSFETs. It is composed of a substrate and a source conducting channel that are both connected to the positively charged drain terminal. The operation of the IPP80N08S406AKSA1 is driven by the application of a negative voltage between the drain and the gate terminal. This negative voltage serves to reduce the resistance between the source and the drain, allowing current to flow through.CharacteristicsThe IPP80N08S406AKSA1 is a rated 8.0 mOhm MOSFET with a total gate charge of 19nC. It is capable of continuous drain-source current up to 34A, with a maximum pulse current rating of 45A. Our device also has an impressive power dissipation capability, able to handle a maximum power rating of 226 W.Rating and PackagingThe IPP80N08S406AKSA1 is rated for a Drain-Source Voltage (Vds) of 30--60V and a Gate-Source Voltage (Vgs) of -4.5V to -12V for best results. It also comes in a standard SMD package, as well as a SOT-223 Package for optimal power handling. ConclusionIn conclusion, the IPP80N08S406AKSA1 MOSFET is a widely applicable power device with excellent power ratings, reliable operation and efficient power dissipation capability. It is used in a variety of power applications, including welding, automotive battery management, power supplies and laptop power management. Additionally, the device comes in two packaging styles and has a rated Gate Charge of 19nC.

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