IPP80N06S2L07AKSA2 Allicdata Electronics
Allicdata Part #:

IPP80N06S2L07AKSA2-ND

Manufacturer Part#:

IPP80N06S2L07AKSA2

Price: $ 0.87
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 80A TO220-3
More Detail: N-Channel 55V 80A (Tc) 210W (Tc) Through Hole PG-T...
DataSheet: IPP80N06S2L07AKSA2 datasheetIPP80N06S2L07AKSA2 Datasheet/PDF
Quantity: 1000
500 +: $ 0.77986
Stock 1000Can Ship Immediately
$ 0.87
Specifications
Vgs(th) (Max) @ Id: 2V @ 150µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 210W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPP80N06S2L07AKSA2 is a single High-Speed Power MOSFET developed for switching applications. This type of transistor is a three-terminal device, consisting of a source, drain and gate. The voltage applied to the gate controls the flow of current between the source and drain.

The MOSFET is a majority carrier device, which means that it relies on the movement of majority carriers, such as electrons or holes, instead of minority carriers. This makes the device very reliable and highly efficient for switching applications. The IPP80N06S2L07AKSA2 has an RDS(on) value of 2.8 milliohms, which helps to reduce the device power consumption and increase efficiency.

This MOSFET is well-suited for applications that require high speed switching, such as motor control, DC/DC converters, and Class D audio amplifiers. The device has a high-performance on-resistance rating, which helps to reduce the voltage drop across the component and minimize power loss. It also has a low gate-source capacitance, making it ideal for high-frequency applications.

The IPP80N06S2L07AKSA2 is manufactured using the latest advancements in semiconductor technology. The unique symmetric design helps to ensure that the drain-source voltage is balanced and the device operates across a wide range of temperatures. This MOSFET also features a low input capacitance, which helps to suppress voltage noise.

In terms of working principle, the old-style MOS field-effect transistors (MOSFETs) use a semiconductor substrate to control the electric current between source and drain electrodes. When a voltage is applied to the gate, the device will switch on, allowing a current to flow. The current flow is determined by the resistance created between the source and drain. If the applied voltage is increased, the MOSFET will switch off, preventing current flow.

The IPP80N06S2L07AKSA2 is a high-performance single MOSFET that is suitable for a wide range of switching applications. It has a low RDS(on) value and a low gate-source capacitance, which helps to reduce power consumption and improve efficiency. It has a balanced drain-source voltage and a low input capacitance, making it ideal for high-frequency applications. The device is also well-suited for motor control, DC/DC converters and Class D audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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