IPP80N06S3L-06

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPP80N06S3L-06 is part of a series of single, high-voltage, P-channel PowerTrench MOSFETs manufactured by International Rectifier. This particular model has a maximum drain-source voltage of 80 V, an on-state resistance of 6 mΩ, and an max continuous drain current of 53 A.

The PowerTrench MOSFETs offer fast and stable switching with a low gate charge, allowing for higher efficiency in a variety of power switching applications. They are typically used in applications such as chargers and switch-mode power supplies, DC/DC converters and motor drivers.

Features

• N-channel enhancement mode
• Low on-state resistance
• Low gate charge
• High-voltage capability
• High-frequency operation

Typical Applications

• Power switches
• DC/DC converters
• Motor drivers
• Switch-mode power supplies

Working Principle
The mechanism of the PowerTrench MOSFETs is based on a junction field-effect transistor. The current in the drain-source channel is controlled by the amount of current flowing in the gate-source region. When the gate-to-source voltage (V_GS) is below the threshold voltage (VTH), then no current will flow between the drain and the source. However, when the gate-to-source voltage (V_GS) exceeds the threshold voltage (VTH), then the PowerTrench MOSFETs will conduct current between the drain and the source.

The PowerTrench MOSFETs are designed with a "punch-through" technology, which helps to reduce the on-state resistance between the drain and the source. This allows for faster switching speeds as well as higher current capabilities. The PowerTrench MOSFETs also have a low gate charge, which helps to reduce the total gate capacitance and allows for higher efficiency in power switching applications.

The specific data is subject to PDF, and the above content is for reference