IPP80P03P4L04AKSA1 Allicdata Electronics
Allicdata Part #:

IPP80P03P4L04AKSA1-ND

Manufacturer Part#:

IPP80P03P4L04AKSA1

Price: $ 1.73
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 80A TO220-3
More Detail: P-Channel 30V 80A (Tc) 137W (Tc) Through Hole PG-T...
DataSheet: IPP80P03P4L04AKSA1 datasheetIPP80P03P4L04AKSA1 Datasheet/PDF
Quantity: 1991
1 +: $ 1.56870
50 +: $ 1.26731
100 +: $ 1.14061
500 +: $ 0.88713
1000 +: $ 0.73505
Stock 1991Can Ship Immediately
$ 1.73
Specifications
Vgs(th) (Max) @ Id: 2V @ 253µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 137W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
Vgs (Max): +5V, -16V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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A Field-effect transistor (FET) is a transistor that uses an electric field to control the flow of current. Field-effect transistors are commonly used in integrated circuits as amplifiers, switches, and active filters. The IFP80P03P4L04AKSA1 is one of the most common FETs available on the market today, and offers excellent performance for a wide range of applications.

The IFP80P03P4L04AKSA1 is a high-performance n-type metal-oxide-semiconductor field-effect transistor (MOSFET). It is constructed with a stripe of active silicon semiconductor, drain, source and gate electrodes, and an integrated thin-film resistor layer. The device is designed to provide low on-resistance and a wide input voltage range.

The IFP80P03P4L04AKSA1 has a wide range of applications, particularly in motor control, lighting, and other applications where linear voltage control is desired. The device can be used in switching power supplies, motor drivers, and relay drivers, as well as for current sensing. Additionally, it can be used for input protection and high-side switching.

The device features very low on-resistance and is capable of delivering a gap voltage up to 250V. The device can be operated at frequencies up to 1MHz, and can handle a peak current of up to 16A. Additionally, the device features an internal diode for protection against transient voltage spikes.

The IFP80P03P4L04AKSA1 operates on the principle of channel enhancement. In an n-type channel, the carrier concentration decreases when a drain-gate voltage is negative, thereby reducing the current flow through the transistor. As the drain-gate voltage becomes positive, a depletion layer is formed at the interface between the n-type substrate and the gate oxide. This decreases the thickness of the depletion layer and decreases the resistance of the channel.

The IFP80P03P4L04AKSA1 is an excellent choice for applications requiring linear voltage control, such as motor control circuits, lighting applications, and high-side switching applications. The low on-resistance and wide input voltage range provide a high level of performance, while the built-in protection features ensure safe operation in a wide range of conditions.

The specific data is subject to PDF, and the above content is for reference

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