IPP80N06S2L06AKSA1 Allicdata Electronics
Allicdata Part #:

IPP80N06S2L06AKSA1-ND

Manufacturer Part#:

IPP80N06S2L06AKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 80A TO220-3
More Detail: N-Channel 55V 80A (Tc) 250W (Tc) Through Hole PG-T...
DataSheet: IPP80N06S2L06AKSA1 datasheetIPP80N06S2L06AKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 180µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 69A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPP80N06S2L06AKSA1 is an N-channel insulated-gate field-effect transistor that specializes in power management duties. It is a part of the N-Channel MOSFET family and is most frequently used in the controlled conduction of high power loads. The efficient thermal design and the rugged package make the IPP80N06S2L06AKSA1 ideal for power management applications.

The IPP80N06S2L06AKSA1 is a voltage-controlled device, which means that it can be used to control the flow of current from one element to the other. The effective drain-source current controlling voltage, or Vds, is at least 40 volts for this specific MOSFET. At the same time, the absolute maximum Vds can be up to 60 volts. Furthermore, the IPP80N06S2L06AKSA1 also features an on-state resistance or RDS(ON) that is generally equivalent to 0.057 ohms.

The IPP80N06S2L06AKSA1 has a dual gate oxide insulation and is designed to work within the -55 C to 175 C temperature range. The surface-mount package is compact and has five pins (four drain-source pins and a single gate pin). To further improve the overall efficiency of the device, the N-channel MOSFET comes with an internal thermal shut down for better power management.

In terms of application field and working principles, the IPP80N06S2L06AKSA1 can be used as an amplifier that amplifies the input signal from a voltage source and outputs it to a current sink. It uses the gate-source voltage (Vgs) to regulate the drain current (Id). The current flow is proportional to the voltage applied to the gate, up to a certain value, which is called the threshold voltage or Vth. The drain current is limited at this threshold, above which it will remain constant. The IPP80N06S2L06AKSA1 is also widely used to switch high power loads, as its low on-state resistance allows it to handle high currents while remaining efficient.

The IPP80N06S2L06AKSA1 comes with a host of features that make it suitable for a wide range of applications. Its low on-state resistance helps reduce conduction losses, while its robust thermal design prevents the device from overheating. Its versatile design also make it an ideal choice for applications that require both amplification and power switching. With its rugged construction and excellent performance, the IPP80N06S2L06AKSA1 is a highly reliable and cost effective solution for a variety of industrial, automotive and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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