Allicdata Part #: | IPP80P04P407AKSA1-ND |
Manufacturer Part#: |
IPP80P04P407AKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH TO220-3 |
More Detail: | P-Channel 40V 80A (Tc) 88W (Tc) Through Hole PG-TO... |
DataSheet: | IPP80P04P407AKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 88W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6085pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 89nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 7.7 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IPP80P04P407AKSA1 is a type of field-effect transistor (FET). It belongs to a category of transistors known as single, insulated-gate, field-effect transistors (IGFETs, also known as MOSFETs). It is designed to be used in a variety of applications. In this article, we discuss the application field and working principle of this particular transistor.
Application Field
IPP80P04P407AKSA1 is a MOSFET designed to be used in a variety of applications, including low-frequency amplifiers, power supplies, motor controls, and industrial automation systems. It is also well suited for switching applications, as its low threshold voltage, low operating current, and heavy-duty load ratings make it an ideal choice for switching devices with high power requirements. Additionally, its high input impedance makes it suitable for use in input stages of analog circuits.
Working Principle
MOSFETs, like all other FETs, operate based on the principle of the electric field. The electric field used in MOSFETs is created by applying a voltage to two metal plates which are separated by a thin layer of an insulating material. This electric field then affects the movement of electrons in a semiconductor material within the transistor. Depending on the type of MOSFET, the current is either blocked or allowed to flow through the transistor.
In the case of the IPP80P04P407AKSA1 MOSFET, the source and drain have an insulated-gate between them. When an appropriate voltage is applied to the gate, the electrons in the semiconductor move to the source and the drain. If electrons are able to move from the source to the drain, then a current is allowed to pass through the transistor. If the voltage applied to the gate is too low, then no electrons will be allowed to move, which results in a blocked current.
Conclusion
The IPP80P04P407AKSA1 MOSFET is a type of transistor which belongs to the category of single, insulated-gate, field-effect transistors. It is designed to be used in a variety of applications, such as low-frequency amplifiers, power supplies, and motor controls. It is popular due to its low threshold voltage, low operating current, and heavy-duty load ratings. Its working principle is based on the principle of the electric field, which affects the movement of electrons in a semiconductor material within the transistor.
The specific data is subject to PDF, and the above content is for reference
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IPP80N04S2H4AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO220... |
IPP80N04S2L03AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO220... |
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IPP80N06S207AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO220... |
IPP80N06S208AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO220... |
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IPP80N06S2H5AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO220... |
IPP80N06S2L05AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO220... |
IPP80N06S2L06AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO220... |
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