IPP80N04S3-04

Vgs(th) (Max) @ Id:	4V @ 90µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	136W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	80nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	4.1 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction
The IPP80N04S3-04 is a N-channel MOSFET that is designed for applications where a low on-resistance, low RDS(on), and low gate charge are required. This MOSFET is highly efficient and suitable for a variety of uses, including power management, motor control and switching, amplifier, and sensor applications. This MOSFET can be used for either positive or negative voltage, depending on the application.

Applications
The IPP80N04S3-04 can be used in a variety of power management, motor control and switching, amplifier, and sensor applications. It is also specified for use in CBF amplifiers and switching applications. This MOSFET is especially well-suited for LED lighting applications and power supplies, as well as in audio amplifiers. This MOSFET also offers an extremely low gate charge, an ultra-low on-resistance, and a low voltage and high speed for any application.

Working Principle
The working principle of the IPP80N04S3-04 is based on the principle of MOSFET transistor. In this MOSFET, N-Channel is connected between the gate and the source with a thin inversion layer. When a suitable voltage is applied between the gate and source, the semiconductor inversion layer is thinned due to the strong electric fields that are generated. This creates a conducting channel between the source and drain, thus allowing current to flow. The total current flow is dependent upon the width and length of the channel, as well as the drain-to-source voltage applied.The channel of the MOSFET is connected to a terminal called the gate. By applying a positive or negative voltage to the gate relative to the source, the channel is opened or closed, and current can be controlled by varying the gate voltage. This makes the MOSFET suitable for power management, motor control and switching, amplifiers, and sensor applications where current needs to be switched on and off.

Characteristics
The IPP80N04S3-04 MOSFET has several characteristics that make it well-suited for power management, motor control and switching, amplifier, and sensor applications. It has a low gate charge of 2.5 nC, ultra-low on-resistance of 4.3 mΩ, and a low voltage and high speed of 5V and 12V. It also has a high transconductance of 91 mS, a large current capacity of 4A, and a high current density. Additionally, the MOSFET is RoHS compliant and is AEC-Q101-qualified. This means that it is suitable for automotive applications and is highly reliable.

Conclusion
The IPP80N04S3-04 MOSFET is an efficient, reliable and highly suitable transistor for use in a variety of applications. It is designed for low on-resistance, low RDS(on), and low gate charge, and offers an extremely low gate charge, an ultra-low on-resistance, a low voltage and high speed, a large current capacity, and a high current density. Additionally, the MOSFET is RoHS compliant and is AEC-Q101-qualified, making it suitable for automotive applications. With its wide range of characteristics, it is well-suited for power management, motor control and switching, amplifier, and sensor applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description