IPP80N04S2H4AKSA2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPP80N04S2H4AKSA2 is a field effect transistor that is part of a family of devices known as metal oxide semiconductor field effect transistors, or more commonly referred to as a MOSFET. The specific type of this transistor is a single MOSFET. This device is made with a very thin layer of silicon dioxide that acts like a gate or an insulator layer between two heavily doped semiconductor substrates.

As the name suggests, this MOSFET is designed to operate in the 80 volt range and can support up to 4 amperes of current. This indicates that it is designed for applications requiring moderate power and current handling. The device also features a low on-state resistance allowing it to be used as a switch.

The most common application of this type of MOSFET is as a switch in low voltage control circuits. In this application the device will be used to turn on and off power to various circuits. Comparator circuits, audio amplifiers, linear regulators, and other circuits are often used in this manner.

The transistor is fabricated using an N-channel depletion mode MOSFET process. This means that the port between the gate and the source is connected to a voltage source. When this voltage is zero, no current can flow through the transistor. On the other hand, when a positive voltage is applied to the gate, the transistor will turn on and will allow current to flow from the source to the drain.

The maximum power rating of this MOSFET is 8 watts and the maximum drain-source voltage is 80 volts. In addition the maximum drain current is 4 amps. This device is rated at a wide temperature range of -55°C to +175°C, making it ideal for applications requiring high temperature operation.

The IPP80N04S2H4AKSA2 is typically used as a switch in control circuits and can also be used as a power amplifier, linear regulator, and comparator. Its low on-state resistance makes it ideal for switching applications as it is able to turn on quickly. The wide temperature range rating of this MOSFET also makes it well suited for use in applications that require high temperature operation.

In summary, the IPP80N04S2H4AKSA2 is a single MOSFET that is part of a family of transistors known as a metal oxide semiconductor field effect transistors. This device is designed for moderate power and current handling applications and is often used as a switch in low voltage control circuits. It is rated at 8 watts of power, a drain-source voltage of 80 volts, and a maximum drain current of 4 amps. It is also rated at a wide temperature range of -55°C to +175°C making it an ideal choice for applications requiring high temperature operation.

The specific data is subject to PDF, and the above content is for reference