Allicdata Part #: | IPP80N06S3-07-ND |
Manufacturer Part#: |
IPP80N06S3-07 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 80A TO-220 |
More Detail: | N-Channel 55V 80A (Tc) 135W (Tc) Through Hole PG-T... |
DataSheet: | IPP80N06S3-07 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 80µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 135W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7768pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 51A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPP80N06S3-07 is a type of MOSFET that falls into the category of Single FETs. A single FET is a term used for a transistor that has only one Field Effect Transistor. In this particular case, the IPP80N06S3-07 is a type of depletion mode MOSFET.
The IPP80N06S3-07 is generally used in various circuit designs and applications. It has a low threshold voltage, so it is well suited for use in digital electronics and battery operated circuits. It offers excellent performance with minimal power consumption and very little heat dissipation. This makes it the ideal solution for designing digital circuit boards within an energy constrained environment.
The IPP80N06S3-07 is also very electrical-friendly. It has a gate-source voltage of 25 V and a drain current rating of 80 A. This high rating makes it suitable for use with demanding industrial applications, that require a great deal of power. Additionally, it has a low RDS(on) which makes it perfect for applications that involve high levels of current.
In terms of working principle, the IPP80N06S3-07 is a type of Field Effect Transistor (FET). This type of component alters its conductivity based on an electrical charge. It is symmetric because it does not have any asymmetric current-voltage characteristics. This means that its behavior is the same on both the drain side and the source side.
When a positive voltage is applied at the gate, then it will reduce the drain-source resistance. This decreases the resistance of the circuit and the source current will increase. On the other hand, when the gate voltage is negative, then it will cause the resistance to raise, which in turn causes the current to decrease. So this behavior makes the IPP80N06S3-07 an ideal component for controlling current and voltage in a wide range of digital circuits.
The IPP80N06S3-07 is also a reliable component as it has very few failure points. It is also long-lasting as it can withstand high temperatures. This makes it perfect for a variety of conditions such as high-vibration environments. Plus, the component is quite inexpensive, so it is an ideal choice for adding power to any electronic project.
In conclusion, the IPP80N06S3-07 is a type of MOSFET that falls into the category of Single FETs. This component is well-suited for use in digital circuits, industrial applications and a wide variety of conditions. It offers low power consumption and minimal heat dissipation, along with very few failure points. Plus, it is very electrical-friendly, with a gate-source voltage of 25 V and a drain current rating of 80 A. Lastly, it has a low RDS(on) which makes it an ideal choice for controlling current and voltage in low power digital circuits.
The specific data is subject to PDF, and the above content is for reference
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IPP80N06S2L05AKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 80A TO220... |
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