IPP80N08S207AKSA1 Allicdata Electronics
Allicdata Part #:

IPP80N08S207AKSA1-ND

Manufacturer Part#:

IPP80N08S207AKSA1

Price: $ 1.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 80A TO220-3
More Detail: N-Channel 75V 80A (Tc) 300W (Tc) Through Hole PG-T...
DataSheet: IPP80N08S207AKSA1 datasheetIPP80N08S207AKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 1.14565
Stock 1000Can Ship Immediately
$ 1.27
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The IPP80N08S207AKSA1 is a Junction Field Effect Transistor (JFET) which is used for amplifying or switching of electronic signals. It has a single N-channel MOSFET with an 3.3V Logic Level gate and an ohmic source and drain path.

The IPP80N08S207AKSA1 device is specifically designed to meet the requirements of high- voltage, low-current and low-power applications such as light dimming, motor control and haptic applications. This device offers high-performance in applications involving low voltage, high current, and high power.

Application Field: The IPP80N08S207AKSA1 is designed to be used in applications such as motor control, light dimming, and haptic feedback. It is suitable for high-performance applications involving low voltage, high current, and high power. In addition, this device can also be used in low-power applications such as switching or driving LEDs.

Working Principle: The IPP80N08S207AKSA1 works by using a semiconductor material to create an electric field. This electric field is used to control the flow of current between the source and the drain. Current can only flow in the direction that is determined by the gate voltage. When a negative voltage is applied to the gate, the electric field is changed which reduces the conductivity of the channel between the source and the drain and thus reduces the amount of current flow.

The operation of this device is based on a MOSFET structure where the flow of current is controlled by the gate voltage. The gate voltage controls the operation of an electric field which is responsible for controlling the flow of current. The gate voltage determines whether or not the electric field is strong enough to allow the current to flow.

The IPP80N08S207AKSA1 is a high-performance device with low voltage and high current ratings. It is designed for low-power and light dimming applications. This device is also suitable for haptic applications.

In conclusion, the IPP80N08S207AKSA1 is a high-performance MOSFET with a single N-channel junction field effect transistor and 3.3V logic level gate. It is designed for applications such as motor control, light dimming, and haptic feedback. This device works by using a semiconductor material to create an electric field which is used to control the flow of current between the source and the drain.

The specific data is subject to PDF, and the above content is for reference

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