IPP80N06S2LH5AKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPP80N06S2LH5AKSA1 is a Single N-Channel Enhancement Mode field-effect transistor (MOSFET). In this type of transistor, the current is controlled by an externally applied electric field that influences how many electrons can flow through the device. This type of transistor is ideal for high speed switching applications because it can operated with very low input capacitances and gate drive requirements. It is also beneficial in high efficiency motor control and LED lighting.

The IPP80N06S2LH5AKSA1 has a p-doped semiconductor between two n-doped layers, which create a junction with two p-n junctions. This junction is referred to as an inversion layer. Due to the voltage applied across the channel, a channel of mobile charges is created due to electrons from one side of the junction becoming attracted to the others side.

When a voltage is applied to the gate terminal, it induces a potential difference between the drain and the source which controls the current flow through the channel. At low voltages, the current is unaffected, however, as the voltage increases, the current through the channel continues to rise.

The enhanced mode of the IPP80N06S2LH5AKSA1 allows for a greater on-state current and faster switching times than depletion MOSFETs. The benefit of this is that the circuit can be switched on faster and be smaller than the equivalent circuit with a depletion MOSFET.

The IPP80N06S2LH5AKSA1 also has a low on-state resistance (Ron), which is the resistance of the transistor when the gate-source voltage (Vgs) is above its threshold voltage (Vgs-th). This low resistance allows the transistor to dissipate the least amount of power possible in the on-state, increasing the overall efficiency of the circuit.

Moreover, the IPP80N06S2LH5AKSA1 has a built-in body diode that prevents power from flowing in the wrong direction. This diode also has a low reverse breakdown voltage (VBR), which improves the protection and performance of the circuits which use this type of transistor.

The IPP80N06S2LH5AKSA1 also has low input capacitance (Cin), which is beneficial when switching high speed signals as it reduces the amount of time needed for the signal to travel through the device. This, in turns, allows for faster switching times than an equivalent lower speed device.

The IPP80N06S2LH5AKSA1 is an ideal choice for a wide variety of high-speed switching applications, including motor control, LED lighting, and power management. This transistor is also beneficial for reducing voltage drops in power supply lines, which can help to increase efficiency.

The specific data is subject to PDF, and the above content is for reference