Allicdata Part #: | IPP80N06S405AKSA1-ND |
Manufacturer Part#: |
IPP80N06S405AKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 80A TO220-3 |
More Detail: | N-Channel 60V 80A (Tc) 107W (Tc) Through Hole PG-T... |
DataSheet: | IPP80N06S405AKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 60µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IPP80N06S405AKSA1 Application Field and Working Principle
The IPP80N06S405AKSA1 is an N-channel PowerTrench MOSFET produced by Fairchild Semiconductor. This type of MOSFET is a single-gate field-effect transistor, that is, a single layer of crystal serves as the transmission channel between the source and the drain, enabling the transistor to perform its switching functions. This type of MOSFET is also known as an insulated-gate field-effect transistor (IGFET).
This type of MOSFET is designed for enhanced performance in a number of applications such as switching, power supply, rectification, and voltage regulation. It can also be used in audio amplifiers, automotive electronics, robotic systems, and other power-related applications. In each of these applications, the IPP80N06S405AKSA1 is used to control the voltage, current, and/or power of a particular circuit.
The IPP80N06S405AKSA1 has a breakdown voltage of 80 V, making it suitable for applications that require high voltage operation; and it has a low threshold voltage of 4 V, making it appropriate for applications that require low power consumption. In addition, the MOSFET has an on-resistance of 4.05 mΩ. This low on-resistance allows the transistor to switch faster than other types of MOSFETs.
The MOSFET operates on a simple principle: an input signal is applied to the gate, which creates an electrical field between the source and the drain. This electrical field then causes the MOSFET to either turn on or off, depending on the type of input signal that is applied. If the input signal is a positive voltage, the MOSFET will turn on and allow current to flow between the source and the drain. Conversely, if the input signal is a negative voltage, the MOSFET will turn off, preventing current from flowing. This structure allows the MOSFET to act as a switch that can be used to control the current, voltage, and/or power of a circuit.
In addition to its ability to switch, the IPP80N06S405AKSA1 also has a number of protection functions. These functions include an anti-latch-up protection feature, which prevents the transistor from latching when it is subject to excessive voltage, and a supply voltage transient protection feature, which protects against voltage spikes that could damage the transistor. The MOSFET also has a high temperature rating of 150°C, which allows it to tolerate higher temperatures than other types of transistors.
The IPP80N06S405AKSA1 is a versatile and reliable transistor with a number of features that make it well-suited for a wide variety of applications. Its low on-resistance allows it to switch quickly and efficiently; its built-in protection features make it resistant to damage; and its high temperature rating allows it to be used in high-temperature environments. All of these features combine to make the IPP80N06S405AKSA1 a great choice for any application that needs a reliable and high-performance MOSFET.
The specific data is subject to PDF, and the above content is for reference
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