IPP80N06S207AKSA1

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The IPP80N06S207AKSA1 can be classified as transistors though it is commonly referred to as a field effect transistor (FET) or metal oxide semiconductor FET (MOSFET). As it is a single device, it can be referred to as a Single FET. This component features advanced process design and reliable high voltage. This article will discuss the application field and the working principle of IPP80N06S207AKSA1.

Application Field of IPP80N06S207AKSA1

The IPP80N06S207AKSA1 can be widely used due to its diverse applications. This device is mostly employed in standard level circuit switchings, power management, relay drivers, and mixed signal circuit applications. This device is also often used as load switches and phase control, as well as in motor control circuits and power supply units. Additionally, this device is suitable for voltage regulators and current controllers, through the utilization of its simple internal circuitry for PWM control.

This device can be widely used in the medical, automotive, consumer electronics and communication industries. Due to its reliable operation, it is sometimes employed as an amplifier, converter and DC voltage regulator.

Working Principle of IPP80N06S207AKSA1

IPP80N06S207AKSA1 applies a logic low voltage to its gate in order to turn OFF the power supply path. This process is referred to as logic level drive, which is enabled through a built-in limiting resistor. This component is compatible with various drive levels, featuring electricity saving and ultra-low voltage operation.

The gate of this device is connected to the substrate, which is referred to as a body connection potential. This results in a reduction of input leakage. The charge stored on the gate is usually the product of the capacitance between the gate and drain. As result, the slow switching is minimized and a lower input drive is enabled. This device was created to have a secure on-state resistance and low gate resistance, to reduce power consumption.

Assuming RDSON resistance is minimal, a considerable amount of current can be enabled, which is coined as drain current. The maximum drain current is limited due to the heating and rate of operation of the entire circuit, as well as the electrothermal operation of the device. A low MOSFET drain-source on-state resistance is necessary to minimize the junction temperature, while keeping the bias supply current digital.

Conclusion

IPP80N06S207AKSA1 is an advanced device belonging to the family of FETs and MOSFETs by GEIP formerly known as Ficom. This single device can be employed in numerous applications, such as power management, load switches, relay drivers, and phase control. This device is used in the medical, automotive, consumer electronics and communication industries, as well as in motor control circuits and power supply units. It has a secure on-state resistance and low gate resistance, operated through a low voltage input. This device can enable a considerable amount of current with minimal RDSON resistance, and can be employed as an amplifier, converter and DC voltage regulator.

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