IPP80P03P4L07AKSA1 Allicdata Electronics
Allicdata Part #:

IPP80P03P4L07AKSA1-ND

Manufacturer Part#:

IPP80P03P4L07AKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 80A TO220-3
More Detail: P-Channel 30V 80A (Tc) 88W (Tc) Through Hole PG-TO...
DataSheet: IPP80P03P4L07AKSA1 datasheetIPP80P03P4L07AKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 130µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
Vgs (Max): +5V, -16V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPP80P03P4L07AKSA1 is an N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed and produced by Infineon Technologies. It is a kind of small-signal low-voltage MOSFET (LV-MOSFET) that is used in a wide range of applications. The device has a breakdown voltage rating of 40V, drain-source on-resistance of 3.2Ohm, and a capacitance of 7.4nF.

The IPP80P03P4L07AKSA1 is typically used in various consumer electronics, such as TVs, audio amplifiers, and computer monitors. It can also be used in consumer appliances, such as washing machines and microwave ovens. In addition, it can be used in automotive electronics, including powertrain control, power windows, and power steering systems. The device can also be used in industrial electronics and instrumentation, such as motor control systems and automation control.

The working principle of the IPP80P03P4L07AKSA1 is based on the MOSFET structure. It consists of a gate, a source, and a drain separated by a thin layer of insulator. When a voltage is applied to the gate, it creates an electric field which modulates the number of electrons between the source and the drain, controlling the amount of current flow through the device. This can be used to control the power output of the device, making the IPP80P03P4L07AKSA1 an ideal device for various applications.

The benefits of using the IPP80P03P4L07AKSA1 include its ability to handle high temperatures, low power consumption, and its fast switching time. It can be used in applications where a high frequency of switching is required. It is also relatively inexpensive and easy to mount, making it a good choice for cost-sensitive applications.

The IPP80P03P4L07AKSA1 is a versatile device that can be used in a wide range of applications. It is designed to provide low on-resistance, high breakdown voltage, and low capacitance values. This makes it an ideal choice for applications that require high switching frequency and low power consumption. It is also relatively inexpensive and easy to mount, making it a good choice for cost-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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