IPP80N06S2L-07 Allicdata Electronics
Allicdata Part #:

IPP80N06S2L-07-ND

Manufacturer Part#:

IPP80N06S2L-07

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 80A TO220-3
More Detail: N-Channel 55V 80A (Tc) 210W (Tc) Through Hole PG-T...
DataSheet: IPP80N06S2L-07 datasheetIPP80N06S2L-07 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 150µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 210W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IPP80N06S2L-07 is a single N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed to provide very low on-state resistance and fast switching characteristics. It is a high performance transistor, making it suitable for applications in areas such as lighting, motor control, and power management.

The IPP80N06S2L-07 is a standard N-channel MOSFET, meaning the gate region is vertically depleted of electrons and has no physical connection to the channel region. The channel region has an N-type doping, allowing the electrons to flow freely between the source and the drain regions. Furthermore, the gate region is connected to a positive voltage source, which in turn allows the electrons to be repelled and the channel region to be cut off from the source and drain regions. The particular design of the IPP80N06S2L-07 makes it particularly suitable for high speed switching as it allows for very low on-state resistances.

The IPP80N06S2L-07 is typically used in areas such as lighting, motor control, and power management. In lighting applications, these transistors can be used to control the current flows within the lighting systems. They can be used to regulate and control the flow of current in the different parts of the lighting system, allowing the user to control the brightness, color, and other features of their lighting system.

In motor control applications, the IPP80N06S2L-07 can be used to control the current and voltage of the motor. By controlling the current and voltage, the motor can be fine-tuned to provide the desired performance. Moreover, the low on-state resistances of the MOSFET allow for a smooth and consistent output from the motor, leading to increased efficiency.

Finally, in power management applications, these transistors can be used to regulate and control the power delivery to different parts of a system. The ability to control the current and voltage of a power supply at the same time allow for efficient and optimized power delivery. This is especially useful in areas such as telecommunications, networking, and computer systems where power delivery is critical.

In conclusion, the IPP80N06S2L-07 is a single N-channel enhancement mode MOSFET designed to provide very low on-state resistance and fast switching characteristics. It is suitable for applications in areas such as lighting, motor control, and power management due to its high performance and low on-state resistances.

The specific data is subject to PDF, and the above content is for reference

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