IPP80N08S2L07AKSA1

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	233nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	7.1 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

IPP80N08S2L07AKSA1 is a single vertical N-channel power MOSFET produced in Ultra Low RDS(on) process. It has excellent dynamic characteristics and superior Avalanche ruggedness. It is widely used in high frequency applications such as switching regulators, hot swap, motor control, and load switches. The main properties of IPP80N08S2L07AKSA1 are as follows: it has superior switching performance, excellent thermal resistance characteristics, and stable electrical parameters when exposed to higher temperatures and voltage values. In addition, it provides a drain-source on-resistance of 2.3mΩ and a drain-source breakdown voltage of 80V.

Application Field

IPP80N08S2L07AKSA1is suitable for low-voltage power management applications such as hot-swap. With its low RDS(on) value and high drain-source breakdown voltage, it is used in hot swap circuits, as it allows for switching of loads up to 80V while maintaining a low loss switch. It is commonly used in buck and boost switches, DC-DC converters and low-voltage power supplies, as it can offer excellent switching performance while delivering low-side current. IPP80N08S2L07AKSA1 can also be used in synchronous buck rectifiers because of its high-speed switching capability and low conduction losses.In addition, IPP80N08S2L07AKSA1 is used as a load switch in various applications, including automotive, audio, and light control. It is designed for quick turn-on and turn-off times, thus, being suitable for applications such as load switching and power control.

Working Principle

The IPP80N08S2L07AKSA1 is a single vertical N-channel power MOSFET, which works based on the principle of the Metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET has four terminals, namely source (S), gate (G), drain (D) and body (B). When a Gate-Source voltage (Vgs) is applied to the two terminals, the channel between source and drain, called the inversion layer, forms an electrically conductive layer due to the presence of mobile electrons in the semiconductor material. This inversion layer acts as an electrical switch that can be opened or closed by changing the Gate-Source voltage (Vgs). When the Switch is opened, no current can flow between source and drain and the output voltage is low. When the Switch is closed, current can flow between source and drain and the output voltage is high.Moreover, FETs provide a high-input impedance and excellent thermal stability, making them suitable for switching applications in power management levels.

Conclusion

IPP80N08S2L07AKSA1 is a low RDS(on) single vertical N-channel power MOSFET produced in an Ultra Low process. It offers excellent dynamic characteristics and superior Avalanche ruggedness. It is widely used in high frequency applications such as switching regulators, hot swap, motor control, and load switches. In addition, due to its switching capability, it is suitable for low-voltage power management applications such as hot-swap, buck and boost switches, DC-DC converters and low-voltage power supplies, and load switching. This is because of its low RDS(on) value, drain-source breakdown voltage, and ability to deliver low-side current. Finally, it is based on the principle of the MOSFET, where a Gate-Source voltage (Vgs) is applied to the two terminals to form an electrically conductive layer that acts as an electrical switch.

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