IPP80P04P4L08AKSA1 Allicdata Electronics
Allicdata Part #:

IPP80P04P4L08AKSA1-ND

Manufacturer Part#:

IPP80P04P4L08AKSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH TO220-3
More Detail: P-Channel 40V 80A (Tc) 75W (Tc) Through Hole PG-TO...
DataSheet: IPP80P04P4L08AKSA1 datasheetIPP80P04P4L08AKSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 120µA
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V
Vgs (Max): +5V, -16V
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Series: Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IPP80P04P4L08AKSA1 is a product series of Transistors - FETs, MOSFETs - Single. It is a logic level enhancement-mode power field transistor. It is produced under extremely strict quality control according to UL, CQL, and SGS safety certifications. The product is used for space-saving, low-loss power-switching applications, benefiting from its low on-state resistance and fast switching speed.

Ipp80P04P4L08AKSA1 Application Field: It is suitable for load switch, level conversion, output control in computer system, 3.3V/5V IO power, circuit protection device switching, controlling power transistor and so on. Also it is applied to switching power supply and relevant power controlling solutions, motor drive selection, motor controllers and other field that can uses the power of MOSFET.

Ipp80P04P4L08AKSA1 Working Principle: This device is built with an N-channel enhancement-mode power MOSFET.It employs a special gate design which provides protection by allowing the gate voltage to raise up to 12V and thus minimizes gate-induced drain leakage current even at high temperature operation. This device is manufactured using the FET (Field Effect) technology which is particularly useful for higher voltages like applications ranging from 30V to 150V. The device has low resistance and low gate charge, which enables low conduction loss, low switching loss, and high efficiency and fast switching.

Ipp80P04P4L08AKSA1 has integrated protection functions like auto-restart protection against shoot-through and overheating protection. The device is highly reliable and can be operated safely across a wide power range. The device also provides a wide variety of current and voltage ratings, making it suitable for various switching power applications.

Ipp80P04P4L08AKSA1 is a highly reliable MOSFET device that supports low-loss power switching applications. This device also has integrated protection functions like auto-restart protection and overheating protection. Furthermore, it provides a wide variety of current and voltage ratings making it ideal for various switching power applications.

The specific data is subject to PDF, and the above content is for reference

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