IRF3704ZLPBF Allicdata Electronics
Allicdata Part #:

IRF3704ZLPBF-ND

Manufacturer Part#:

IRF3704ZLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 67A TO-262
More Detail: N-Channel 20V 67A (Tc) 57W (Tc) Through Hole TO-26...
DataSheet: IRF3704ZLPBF datasheetIRF3704ZLPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 57W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF3704ZLPBF is part of the lineup of products offered by International Rectifier, a company that produces an array of boards and components for the electrical engineering industry. This product is part of their MOSFET lineup, and is a single, N-Channel device. The IRF3704ZLPBF has been designed to be used in a number of different applications, and this article will explore what these applications are and the working principles of this device.

Application of IRF3704ZLPBF

The IRF3704ZLPBF is a N-Channel MOSFET that can be used for a number of different applications. It is particularly suited to high-frequency and high-efficiency circuits, making it an ideal choice for a wide range of power conversion applications. This device has been used extensively in switch mode power supplies and power conversion applications, where it can be used to convert DC power to AC power.

The IRF3704ZLPBF has been widely used in motor control applications, due to its high power efficiency and its ability to switch at high frequencies. It is also suitable for application in DC-DC converters, AC-DC converters and other power conversion applications where reliable switching is required. It is also able to operate at very low on-resistance voltages and can withstand high drain-source voltages.

The device is well suited to automotive and industrial applications, where high reliability and high efficiency are essential. It can also be used in audio power amplifiers, where its high switching frequencies allow for improved transistor performance. Furthermore, the device is also ideal for use in switch mode power supplies, where it offers excellent performance with very low power dissipation.

Working Principle of IRF3704ZLPBF

The working principle of the IRF3704ZLPBF is based on the MOSFET technology, which allows it to operate at high powers, at high frequencies and with very low power dissipation. The device features an N-Channel MOSFET that is composed of a drain and a source. The gate of the MOSFET is also connected to the drain, allowing for the current to be transferred from the source to the drain.

When using the IRF3704ZLPBF, the gate of the device must be driven with a voltage. This voltage is then used to control the current flow between the source and the drain. A small voltage drop across the MOSFET allows a large current to pass through the device. This is the working principle of the IRF3704ZLPBF, and it is why it is so commonly used for high power applications, where large currents and high switching frequencies are required.

Conclusion

The IRF3704ZLPBF is a N-Channel, single MOSFET device that has been designed to be used in high power, high frequency and low power dissipation applications. It is well suited to a wide range of applications, from motor control and DC-DC conversion to switch mode power supplies and audio power amplifiers. The working principle of the device is based on its MOSFET technology, which allows for very high power levels to pass through the device when driven with a suitable voltage.

The specific data is subject to PDF, and the above content is for reference

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