Allicdata Part #: | IRF3711-ND |
Manufacturer Part#: |
IRF3711 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 110A TO-220AB |
More Detail: | N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Throu... |
DataSheet: | IRF3711 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2980pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF3711 is a Power Metal-Oxide-Semiconductor Field-Effect Transistor or MOSFET for short, which has single N- Chanel configuration. The maximum voltage rating for this device is 200V, and it can handle currents up to 19 amps. The device comes in a surface mount 3x2 package. It has an on-resistance of 1.3 ohms when Vgs voltage is -10V and 6.3 ohms when Vgs is 0V, and a thermal resistance of 22K/W. Its maximum drain-source voltage is 210V and the maximum power dissipation is 44W. The device is rated for a drain current of 10A and drain-source breakdown voltage of 175V.
The IRF3711 is used in a variety of applications, such as motor drives, lighting systems, and power electronic converters. It is also used in power amplifiers and switching power supplies. It is also used in battery chargers and motor controllers. The device can be used in power electronics applications to control and regulate the power delivery to a load. The device is capable of controlling the both the current and voltage in any circuit.
The IRF3711 is a normally off MOSFET, which means that it must be turned on for it to start conducting. This is done by applying a gate voltage, Vgs, to the gate terminal that is greater than a certain threshold value. This gate voltage will create a potential barrier between the drain and source, preventing the current from flowing until the gate voltage is increased. With an increase in the gate voltage, the resistance of the barrier decreases and the current starts flowing through the channel.
The IRF3711 also features a Subthreshold region, which is the region between Vgs on and off. In this region, the resistance of the device increases and the current flowing through the channel decreases. This allows the device to be used for power management purposes as it can be used to reduce or adjust the power output when required.
The IRF3711 also features a thermal protection circuitry which will shut the device off if the temperature of the device exceeds a certain threshold. This feature prevents the device from over heating, ensuring an extended operating life.
The IRF3711 is a relatively new device, but has already gained wide popularity in applications such as motor drives, lighting systems, and power electronic converters. It is an extremely versatile device and can be used in many different applications due its wide range of features. It is an ideal choice for applications which require high power ratings and high efficiency.
The specific data is subject to PDF, and the above content is for reference
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