Allicdata Part #: | IRF3717TR-ND |
Manufacturer Part#: |
IRF3717TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 20A 8-SOIC |
More Detail: | N-Channel 20V 20A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | IRF3717TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2890pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF3717TR is a 5V Half-Bridge N-Channel Power MOSFET developed by International Rectifier. This device is designed to provide reliable and very low on-state resistance performance in a wide range of applications. In brief, it is an extremely robust, reliable and cost-effective MOSFET solution.
The IRF3717TR has a wide variety of beneficial features, including high current and voltage handling capability, low on-resistance of only 0.009ohm, excellent thermal stability, and very good gate to drain stability. The device is also excellent in switching applications due to its extremely low device gate charge.
The main applications of this device are in motor driver and power switching circuits. This device can be used to drive high-power motors where high reliability, efficiency and low cost are required. It can also be used in various power switching applications, such as audio amplifiers, Class D amplifiers, and high-power audio amplifiers. In addition, it can also be used in DC-DC converters, as well as in solar panel controllers.
The IRF3717TR has an integrated half-bridge MOSFET circuit that can be connected in a low-side or top-side configuration. The device is also equipped with gate protection on the N-channel FETs and is offered in a package that is compatible with the industry-standard 2-sourcing packages. The device also has an operating temperature range of -40 to +85 C, making it suitable for both military and commercial applications.
The working principle of the IRF3717TR is simple and straightforward. The device works by passing electric current through its drain-source path when a voltage is applied to the gate. This voltage causes a channel to form under the surface of the silicon substrate, allowing current to flow freely through the drain-source path. The device is capable of handling high current and voltage due to its low on-resistance, making it an ideal solution for motor driver and power switching circuits.
In conclusion, the IRF3717TR is an extremely reliable and cost-effective solution for motor driver and power switching applications. It has low on-resistance, excellent temperature stability and gate-to-drain stability, and is available in a standard 2-sourcing package. The device is suitable for use in both commercial and military applications and can handle high current and voltage without any problems.
The specific data is subject to PDF, and the above content is for reference
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