Allicdata Part #: | IRF3711STRL-ND |
Manufacturer Part#: |
IRF3711STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 110A D2PAK |
More Detail: | N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Surfa... |
DataSheet: | IRF3711STRL Datasheet/PDF |
Quantity: | 4187 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2980pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF3711STRL is a high-performance S-class field-effect transistor (FET) designed for use in automotive applications. It is designed to withstand high temperatures, and can be used in hostile environments like under-hood engine compartments. It is typically used for automotive automotive primary and secondary side switching. It is available in DPAK and TO-220 packages.
IRF3711STRL Application Field
The IRF3711STRL FET is used primarily in automotive control and power systems. It has a low on-state resistance and high power dissipation rating, making it an ideal choice for primary and secondary side switching applications. It can be used in electronic control units (ECUs), transistor arrays, load drivers, and interface and signaling switches. It is commonly used in cooling fan controls, electric motor control, relay and fuel injection systems, and power modules.
Working Principle
The IRF3711STRL FET is a three-terminal device, consisting of a source, gate and drain. A certain level of gate voltage is applied to the semiconductor to create a channel between the source and drain, allowing current to flow between them. The current flow from the source to the drain is controlled by the voltage applied to the gate terminal. This voltage controls the resistance between the source and drain, allowing for precise control of current through the device.
The IRF3711STRL FET offers superior performance due to its low on-state resistance and high power dissipation rating. It is able to handle high current ratings, making it suitable for use in power switch circuits. It is also able to withstand high temperatures, making it a suitable choice for automotive applications. Furthermore, the device has a low gate-to-draincharge and a fast switching speed, allowing for low voltage operation.
The IRF3711STRL FET also provides protection mechanisms which can help inhibit fault conditions and ensure safe operation. A temperature sense circuit and a thermal shutdown protection feature allows the device to detect a thermal overload or overtemperature condition and shut down before damage occurs to the device.
In summary, the IRF3711STRL FET is a high-performance FET designed for automotive applications. It offers superior performance, low on-state resistance, high power dissipation rating, and excellent thermal performance. This makes it an excellent choice for primary and secondary side switching applications.
The specific data is subject to PDF, and the above content is for reference
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