| Allicdata Part #: | IRF3709ZSPBF-ND |
| Manufacturer Part#: |
IRF3709ZSPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 87A D2PAK |
| More Detail: | N-Channel 30V 87A (Tc) 79W (Tc) Surface Mount D2PA... |
| DataSheet: | IRF3709ZSPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 79W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2130pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 21A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 87A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF3709ZSPBF is a N-Channel Enhancement-Mode Vertical Power MOSFET which is designed for use in a wide range of applications. It features a very low On-Resistance of 3.9mΩ, a high current rating of 60A and a voltage rating of 60V. It is perfect for switching low voltage sources in most switching applications such as power supplies, lighting control, and motor control.
The IRF3709ZSPBF is a state-of-the-art vertical power MOSFET with an advanced vertical trench cell structure and process technology. It has a low threshold voltage and an enhanced body diode for reliable operation. This design also provides very low On-Resistance and low gate charge, making it suitable for high speed, high frequency and low power switching applications.
The working principle of the IRF3709ZSPBF is simple. It uses the principle of field effect transistor (FET) to control the flow of electrical current through the device. An applied voltage causes a field effect in the gate-source region. This field effect causes a current to flow between the source and drain. By controlling the amount of current flowing through the device, the device can be used to switch electrical signals.
The IRF3709ZSPBF is an ideal choice for a wide range of applications including power supplies, motor control, and lighting control. It is also suitable for use in high-speed, high-frequency switches and low-power applications. It is also a great choice for high-side motor control applications where fast switching speeds are required. In addition, the device offers excellent thermal performance and a wide range of temperature operating range.
The IRF3709ZSPBF is a highly reliable device that is well suited for a wide range of applications. It offers low On-Resistance, high current rating and voltage rating, excellent thermal performance, and a wide temperature operating range. The device is also optimized for high speed, high frequency, and low power applications. The device also features an advanced vertical trench cell structure and process technology, making it highly efficient and reliable. It is perfect for switching low voltage sources in most switching applications.
The specific data is subject to PDF, and the above content is for reference
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IRF3709ZSPBF Datasheet/PDF