IRF3805 Allicdata Electronics
Allicdata Part #:

IRF3805-ND

Manufacturer Part#:

IRF3805

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 75A TO-220AB
More Detail: N-Channel 55V 75A (Tc) 330W (Tc) Through Hole TO-2...
DataSheet: IRF3805 datasheetIRF3805 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 330W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF3805 is a MOSFET (metal-oxide-semiconductor field-effect transistor) that is widely used in consumer electronics and other applications. It was designed and manufactured by International Rectifier Corporation, a company that provides power electronics and communications semiconductor solutions. The IRF3805 is a single-N-channel MOSFET, which means it has one N-type enhancement-mode channel. This channel is designed to be used to amplify or switch electronic signals.

The IRF3805 is a very versatile device, and can be used in a variety of applications where a reliable, high-powered transistor is needed. It is commonly used in voltage and current regulato rs, amplifier circuits, power supply modules, and switching applications. The IRF3805 also has high power handling capability, making it suitable for use in high-power applications such as power amplifiers.

The basic working principle of the IRF3805 is relatively simple. When an electrical signal is applied to the gate of the MOSFET, the source-drain path between the source and the drain terminals is opened up, allowing electrons to flow through the channel. This flow of electrons is regulated by an electric field produced by the gate of the MOSFET, which is why the IRF3805 is commonly referred to as a field-effect transistor.

The IRF3805 is capable of handling currents of up to 40A, making it suitable for high-power applications. It is also relatively insensitive to temperature variations, making it suitable for use in a variety of operating environments. The device is also rated to handle voltages up to 100V, making it suitable for circuits where high voltages are present.

In addition to its wide range of uses, the IRF3805 also has a number of features that make it a highly reliable device. The device has quick switching times, which makes it suitable for time-critical applications. It also has high drain-source breakdown voltage, which means it can handle large voltage spikes without any damage. Finally, it has a low total gate charge, meaning it has a low power consumption when in use.

The IRF3805 is a versatile, reliable device that is suitable for a wide range of applications. It is capable of handling high currents, high voltages, and high temperatures, making it suitable for use in a variety of different environments. It also has a number of features that make it a highly efficient device, such as quick switching times and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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