IRF5850TRPBF Allicdata Electronics
Allicdata Part #:

IRF5850TRPBFTR-ND

Manufacturer Part#:

IRF5850TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 20V 2.2A 6-TSOP
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 2.2A 960mW Sur...
DataSheet: IRF5850TRPBF datasheetIRF5850TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Base Part Number: IRF5850PBF
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 960mW
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF5850TRPBF is a high performance N-channel power MOSFET array. The device consists of two identical N-channel power MOSFETs, featuring high current capability, low on-resistance and fast switching speed. It is designed to provide a wide range of applications, including motor control, power amplifier, home appliances, consumer electronics, and audio amplifiers.

The IRF5850TRPBF has a wide variety of features, such as high-performance power MOSFETs with low on-resistance and fast switching speed, optimized gate drive for low gate charge, and its improved SOA to provide enhanced reliability and design flexibility over previous generations. The device also features excellent thermal and electrical stability, allowing for a wide variety of applications.

The IRF5850TRPBF is capable of providing a wide range of functionality, from low to high power applications. The device is well-suited for power control and switching applications, as well as motor control, power amplifier, and audio amplifiers. It is designed to provide superior performance in a wide range of environments, including automotive, industrial and consumer electronics. The device also offers excellent thermal and electrical stability, which helps to improve design flexibility.

The IRF5850TRPBF has a simple working principle. The device consists of two identical N-channel power MOSFETs, which are connected in series with the source and drain terminals of each device connected in common. The gate terminal of each device is then used to control the voltage applied between the source and the drain, which determines the flow of current between the two terminals. The gate terminal is controlled using an input signal, allowing for easy control and better thermal management.

The IRF5850TRPBF is a highly reliable, versatile, and efficient power MOSFET array that provides excellent performance in a wide range of applications. The device offers high current capability, low on-resistance, fast switching speed and optimized gate drive to provide enhanced performance. The device also offers excellent thermal and electrical stability, allowing for a wide variety of applications and helping to improve design flexibility. The device is an ideal solution for motor control, power amplifier, home appliances, consumer electronics, and audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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