| Allicdata Part #: | IRF540PBF-ND |
| Manufacturer Part#: |
IRF540PBF |
| Price: | $ 1.23 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 100V 28A TO-220AB |
| More Detail: | N-Channel 100V 28A (Tc) 150W (Tc) Through Hole TO-... |
| DataSheet: | IRF540PBF Datasheet/PDF |
| Quantity: | 2748 |
| 1 +: | $ 1.22850 |
| 10 +: | $ 1.19850 |
| 100 +: | $ 1.14720 |
| 1000 +: | $ 1.06590 |
| 10000 +: | $ 0.90270 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 77 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRF540PBF is a field-effect transistor (FET) with interesting properties that allows it to be used in a variety of applications. It is a type of N-channel enhancement-mode power MOSFET that can be used to control and manipulate current. This device is manufactured by International Rectifier Corporation (IRC) and is available in TO-220, TO-220F, TO-247, and DPAK packages.
IRF540PBF is composed of three terminals: the gate, drain, and source, which are charged with certain voltages. The gate terminal is charged with either positive or negative voltage that, when increased, will cause the device to turn on. The drain and source terminals, on the other hand, are charged with the external power source, or the voltage that will be manipulated. They must be connected to the common ground in order for the device to function properly.
IRF540PBF’s main feature and biggest advantage is its ability to handle higher voltages than what would be allowed with other FETs. Its maximum drain-source voltage is 50V and its maximum drain current is 20A. This makes them ideal for power switching applications where a large amount of current will be shifted. Their maximum power dissipation is lower than other FETs, however, so they should not be used for applications where more power will be dissipated.
Another thing that makes IRF540PBF unique is its ability to operate at high frequency levels. Its low input capacitance and low gate-charge makes it perfect for high-frequency electronic switching applications such as radio frequency (RF) components, amplifiers, and even cellular communication devices. The device also has a fast switching speed of about 4 nanoseconds, which makes it suitable for high-speed applications.
Finally, because of its good thermal and electrical characteristics, IRF540PBF can be used in applications that require precise power control. This makes them perfect for industrial applications such as motor control, current sensing, and voltage regulation. It is also used in consumer electronics such as laptop computers, digital cameras, and other digital devices.
In conclusion, IRF540PBF is a versatile N-channel enhancement-mode power MOSFET that can be used in a variety of applications because of its ability to handle higher voltages and its fast switching speed. It is also used in applications that require precise power control due to its good thermal and electrical characteristics. It is available in TO-220, TO-220F, TO-247, and DPAK packages.
The specific data is subject to PDF, and the above content is for reference
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IRF540PBF Datasheet/PDF