
Allicdata Part #: | IRF5800-ND |
Manufacturer Part#: |
IRF5800 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 4A 6-TSOP |
More Detail: | P-Channel 30V 4A (Ta) 2W (Ta) Surface Mount Micro6... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | Micro6™(TSOP-6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 535pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF5800 is a high-voltage, high-current, vertical MOSFET used primarily as a single device in switch-mode power converter applications.
This power MOSFET offers positive channel temperature coefficient, fast switching and low thres-hold voltage. It is capable of driving large output capacitance, making it ideal for high-speed switching and signal-level switching applications. It is also particularly suited for industrial applications, such as motor speed and current control, over-voltage protection, temperature sensing and temperature control.
The power rated drain-source voltage rating of the IRF5800 is as high as 500V, making it well suited for high-power switching applications. The maximum drain current rating of the device is impressive, with a rating as high as 2.5 A. The maximum junction temperature rating is 175°C, which is one of the highest ratings available among power MOSFETs.
IRF5800 Working Principle
Power MOSFETs are normally-on devices, meaning that when voltage is applied to the drain-source terminals, current will flow. When a negative voltage is applied to the gate terminal, an electric field is created which reduces the current flow and ultimately turns off the device.
When the gate voltage is below the threshold voltage, typically -2.2 V for an IRF5800, this electric field is insufficient for it to be turned off. The threshold voltage can be thought of as the amount of voltage needed to turn the device on.
The drain-source current is then dependent on the channel voltage drop, which is in turn affected by the channel length, width and the drain-source voltage. The channel width can be varied, allowing for differences in output current capability. The gate voltage is used to control the size of the channel and is also used to turn the device off when necessary.
The ON-resistance of the device is generally quite high, and is often the main limitation in power dissipation. As the gate voltage is increased, the resistance of the device is reduced, resulting in greater current flow, and thus increased power dissipation. To avoid this, it is necessary to limit the gate voltage to prevent the device from dissipating too much power.
IRF5800 Application Fields
Due to its impressive ratings, the IRF5800 is used in a variety of high-power switching applications. It can be found in industrial motor controllers, contactors, soft-start circuits, power inverters, switch-mode power converters, home appliances and DC-to-DC converters, among others.
The device is also popular in consumer electronic applications, such as LED lighting and LED displays, battery chargers, laptop computers, and consumer audio amplifiers. The low gate threshold voltage of the IRF5800 makes it ideal for low-power applications. Some automotive applications may also use the IRF5800, generally in the form of power MOSFETs for load and gate drive circuits.
The IRF5800 is a versatile and powerful device, and can be used for a host of applications. Its high-voltage, high-current ratings make it suitable for many high-power switching applications, and its low threshold voltage makes it suitable for low-power applications as well.
The specific data is subject to PDF, and the above content is for reference
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IRF540NSTRLPBF | Infineon Tec... | -- | 256 | MOSFET N-CH 100V 33A D2PA... |
IRF510S | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A D2P... |
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IRF520STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.2A D2P... |
IRF520NSTRR | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 9.7A D2P... |
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IRF540ZSTRRPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 36A D2PA... |
IRF540A | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 28A TO-2... |
IRF510STRRPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRF5805TRPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 30V 3.8A 6-TS... |
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IRF5852TRPBF | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 20V 2.7A 6-T... |
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IRF5806TRPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 20V 4A 6-TSOP... |
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