IRF540ZPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	92W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1770pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	63nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	26.5 mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IRF540ZPBF is a N-Channel 200V Power Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) that is commonly used in power switching applications. It has a drain to source withstand voltage rating of up to 200 V and a maximum junction temperature (Tj) of 175°C. It also features a low on- resistance of 12.5mΩ, a maximum peak current of 65 amps and fast switching time of 8.2ns. The IRF540ZPBF is commonly used in various forms of switching, such as opening and closing lines between loads and power source, converting into AC or DC current, and providing overload protection to circuit overloads.An integral component of the structure of a MOSFET is its Gate-Source (G-S) region. The gate is an insulated gate that is electrically insulated from the semiconductor region of the MOSFET by an insulator. A positive voltage applied to the gate will cause a current to flow between the source and drain regions, with the amount of current being dependent on the amount of gate terminals connected to the source and drain. The IRF540ZPBF has an extended G-S region, which results in enhanced gate control and improved performance over other types of transistors.The working principle of the IRF540ZPBF is based on electric field controlling an electron current. It is an example of modern day transistor applications that use two independent gate electric fields within the MOSFET to control the operating current. The two electric fields in the IRF540ZPBF are created by the two gate terminals, which are connected to the source and the drain. The amount of electric fields generated depends greatly on the material from which the transistor is constructed.The IRF540ZPBF can be used in a variety of electronics applications, including switching power supplies, digital switching, and interface circuits. It can also be used in motor control and rectification circuits, as well as in industrial control and analog circuits. It can be used to provide all the necessary control signals, such as power on/off and speed/strength of signals.The IRF540ZPBF features an efficient design that reduces power loss and maximizes circuit performance. It also has a package design that makes it suitable for surface mount technology applications, which makes it ideal for modern day circuit designs with smaller footprints and higher levels of integration.Overall, the IRF540ZPBF is an ideal choice for high-performance power switching and heavy-duty industrial applications. It is easy to use and has low on- resistance ratings and fast switching times. Its insulated gate provides added protection from static discharge and thermal runaway, making it a safe, reliable and cost-effective choice for a range of different circuit applications.

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