Allicdata Part #: | IRF530SPBF-ND |
Manufacturer Part#: |
IRF530SPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 14A D2PAK |
More Detail: | N-Channel 100V 14A (Tc) 3.7W (Ta), 88W (Tc) Surfac... |
DataSheet: | IRF530SPBF Datasheet/PDF |
Quantity: | 175 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 88W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 8.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRF530SPBF is a single enhancement-mode silicon gate power MOSFET. It is a type of transistor that is typically used as a switch or in various linear applications where its voltage and current capabilities make it ideal. MOSFETs are used in a wide range of applications and this article will discuss the application fields, working principle and features of the IRF530SPBF.
Application Fields of IRF530SPBF
The IRF530SPBF is suitable for a variety of applications, including switching, motor control, lighting, and audio/video. It is a popular choice for switching applications because of its low on-state resistance and fast switching times. The IRF530SPBF is also well-suited for applications that require high power dissipation, such as motor control, and for audio and video applications that require reliable and low-power operation.
Working Principle of IRF530SPBF
The IRF530SPBF functions as a depletion-mode transistor that is controlled by the gate-source voltage. When the gate-source voltage is negative the MOSFET is “on”, and allows current to flow between the drain and source terminals. When the gate-source voltage is positive, the MOSFET is “off”, and no current flows between the drain and source terminals. This working principle makes the IRF530SPBF suitable for use in applications where it is required to switch currents on and off rapidly in response to external control signals.
Features of IRF530SPBF
The IRF530SPBF is a single-mode MOSFET with an Rds(on) of 50mΩ, which makes it ideal for high power applications. It can handle currents of up to 30A continuous and 200A pulsed with a gate charge of 55nC. The on-state drain-source voltage is rated at 20V, while the on-resistance is typically 2mΩ. The IRF530SPBF is also temperature-compensated, which means that its drain-source resistance will remain low over a wide temperature range. Finally, it is designed to operate over a wide range of frequencies, from DC to10MHz, making it suitable for high-frequency applications.
The IRF530SPBF is a reliable and versatile power MOSFET that is suitable for a wide range of applications. Its low on-state resistance and fast switching times make it ideal for switching applications, while its high power capabilities make it a good choice for motor control, lighting, and audio/video applications. It is temperature-compensated and can operate over a wide frequency range, making it a reliable choice for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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