IRF5803

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	Micro6™(TSOP-6)
Mounting Type:	Surface Mount
Power Dissipation (Max):	2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1110pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	37nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	112 mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	3.4A (Ta)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRF 5803 is a power Field Effect Transistor (FET) manufactured and distributed by International Rectifier Corporation. This device is also known as N-Channel HexFET technology and it is designed for high power operation. The IRF 5803 can control high currents and be used for a wide range of applications including electrical circuits, gate drive circuits, power supply converters, amplifiers, and other related operations.This FET is constructed using silicon with a thickness of one-micron, which means that it is able to deliver high power with low resistance. The IRF 5803 is capable of delivering an impressive current rating of 10A and a voltage rating of 100V. It can also withstand high temperatures, making it suitable for various applications in which heat dissipation is a concern.The IRF 5803 also has a low on-resistance, allowing it to deliver more power with less heat loss. This low on-resistance also helps to improve overall efficiency by allowing the device to run with lower power consumption and thus, lower energy costs. Another advantage of this FET is that it has a high frequency response, which allows it to accurately control the frequency of signals.The main application field of IRF 5803 is the power switches and logic channels. The IRF 5803 is a low on-resistance, high-current switch with an outstanding performance and speed. This device is applicable to the power switches and logic channels of various PCB devices. This FET’s low on-resistance and high-current capability make it more suitable than other FETs under the same conditions.The working principle of IRF 5803 is also important to understand. This device is an N-Channel HexFET technology and it works based on the principle of forming a strong electric field barrier between its two leads. This electric field is induced when a voltage is applied across its gates. The higher the voltage applied between the two gates, the thicker the electric field barrier will be. In this way, the N-Channel HexFET works as a power switch that can control the current flow.When the voltage applied to the gate is above a certain limit, the strong electric field generated between its two leads open the device\'s channel and allow the charge carriers (electrons) to flow. When the voltage is reduced, the electric field barrier weakens and the FET is effectively turned off. This way, the FET acts as a switch that can be used to control the amount of current flowing in a circuit.IRF 5803 is a powerful and reliable N-Channel HexFET that can be used in various applications. Owing to its low on-resistance and high-current capability, it is ideal for controlling power switches and logic channels in various devices. It has a wide application field and can also be used in other applications such as motor control, power supply converters and amplifiers. The working principle of this FET is based on the formation of a strong electric field barrier that helps to control the current flow in the circuit.

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