IRF5210STRLPBF Allicdata Electronics
Allicdata Part #:

IRF5210STRLPBFTR-ND

Manufacturer Part#:

IRF5210STRLPBF

Price: $ 0.87
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 100V 38A D2PAK
More Detail: P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Surfa...
DataSheet: IRF5210STRLPBF datasheetIRF5210STRLPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.86667
10 +: $ 0.75111
100 +: $ 0.60667
1000 +: $ 0.57778
10000 +: $ 0.54889
Stock 1000Can Ship Immediately
$ 0.87
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 60 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF5210STRLPBF is part of the family of field-effect transistors (FETs), making it a key component in the modern electronic circuit systems. It is a high-voltage, high-speed, low-drain-source on-resistance dual N-channel MOSFET. MOSFETs are particularly well-suited for applications requiring low output resistance and fast switching speeds.

The basic function of an IRF5210STRLPBF MOSFET is to amplify or control the current in a circuit. It is usually used to switch a load or regulate power and contains two distinct components: a source and a drain. It works by allowing the input signal’s electrical current to travel through the MOSFET from source to drain, thereby controlling the flow of current.

The IRF5210STRLPBF is typically used in power applications such as power supplies and converters, and it is also found in automotive and industrial applications. It can also be used in power-supply designs, switchmode power supplies and audio applications. In addition, it can be used in digital integrated circuits and memory circuits, providing efficient power regulation.

The IRF5210STRLPBF has an RDS(on) of 8.5 mΩ, a drain-source voltage of 55V, and a continuous drain current of 8.9 A. It is a low gate charge FET, making it well suited for applications that require low on-resistance and fast switching speeds. It also has a high input capacitance which helps reduce power losses in applications that require fast switching speeds.

The IRF5210STRLPBF is designed to operate at temperatures ranging from -55°C to +150°C and is rated for a storage temperature from -65°C to +175°C. This makes it well suited for high-temperature applications that require robust operation and long-term reliability.

In conclusion, the IRF5210STRLPBF is a versatile dual N-channel MOSFET that can be used in a variety of applications. The device offers a high input capacitance, low gate charge, high voltage and fast switching speeds, making it ideal for many high-power, high-performance applications. It is also designed to operate at high temperatures, making it suitable for high-temperature and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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