IRF520NS Allicdata Electronics
Allicdata Part #:

IRF520NS-ND

Manufacturer Part#:

IRF520NS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 9.7A D2PAK
More Detail: N-Channel 100V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Surfa...
DataSheet: IRF520NS datasheetIRF520NS Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF520NS is a single N-channel power Field Effect Transistor (FET) with an enhancement mode of operation. This component features high input impedance and can be used in various applications such as switch-mode power supplies, audio amplifiers, filters, and many more. This article will discuss the application fields of the IRF520NS component, as well as its working principle.

Applications

The IRF520NS component can be used in different applications such as:

  • Switch-mode Power Supplies: This component can be used in switch-mode power supplies. It can be used as a low-speed switch for the switching of the power supplies in AC/DC converters. Additionally, it can be used for high-frequency switching of power supply devices such as inductors, capacitors, and other components in the circuit.
  • Audio Amplifiers: The IRF520NS component can also be used in audio amplifiers. It is particularly suitable for applications requiring high input impedance, low thermal resistance, and high switching speed. It is also suitable for applications which require accurate signal switching.
  • Filters: The IRF520NS component can be used as a filter as well. It can be used for the filtering of high-frequency electromagnetic radiation that is radiated from electric and electronic components. Additionally, it can be used for the filtering of DC and AC power. The component can also be used for the filtering of RF signals in communication systems.
  • Digital Circuits: The IRF520NS component can be used in digital circuits as well. It can be used in digital logic gates to achieve precise switching between two states. Additionally, it can be used in flip-flops and other sequential logic circuits as well.

Working Principle

The IRF520NS is a single N-channel power Field Effect Transistor (FET). It is an enhancement-mode FET which means that the current flow through this device is through its N-type channels when the gate is at a higher potential than the source. When the gate is at a lower potential than the source, the device is in its off-state. The higher the potential difference between the gate and the source, the higher the current flow through the device. The current that can flow through the device is limited by the drain-source voltage, or Vds, of the device. This voltage is limited to 100V and the maximum current which can be passed through the device is 10A.

The working of the IRF520NS component is critial to it\'s application fields and it is important to understand the principle behind the FET. The device works based on the principle of transistor action. This principle states that the amount and direction of current flow between two terminals of a conductor depends on the voltage applied to the third terminal. In this device, the voltage applied to the third terminal is applied to the gate. The source and drain are connected to source of electric energy, while the gate is connected to a control circuit. This control circuit provides the gate voltage and thus, controls the current flow through the device.

The IRF520NS component is a very versatile device and it can be used in various applications. Its high input impedance and low thermal resistance make it ideal for applications such as switch-mode power supplies, audio amplifiers, filters, and many more. The basic working principle of this transistor is critical to its application fields and it is essential to understand and implement the device correctly to ensure reliable operation.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IRF5" Included word is 40
Part Number Manufacturer Price Quantity Description
IRF5305LPBF Infineon Tec... -- 1000 MOSFET P-CH 55V 31A TO-26...
IRF540A ON Semicondu... -- 1000 MOSFET N-CH 100V 28A TO-2...
IRF540ZLPBF Infineon Tec... 1.01 $ 557 MOSFET N-CH 100V 36A TO-2...
IRF530SPBF Vishay Silic... -- 175 MOSFET N-CH 100V 14A D2PA...
IRF540SPBF Vishay Silic... -- 501 MOSFET N-CH 100V 28A D2PA...
IRF510STRRPBF Vishay Silic... -- 1000 MOSFET N-CH 100V 5.6A D2P...
IRF540 STMicroelect... -- 1000 MOSFET N-CH 100V 22A TO-2...
IRF530 STMicroelect... -- 1000 MOSFET N-CH 100V 14A TO-2...
IRF520 STMicroelect... -- 1000 MOSFET N-CH 100V 10A TO-2...
IRF510 Vishay Silic... -- 1000 MOSFET N-CH 100V 5.6A TO-...
IRF520N Infineon Tec... -- 1000 MOSFET N-CH 100V 9.7A TO-...
IRF510S Vishay Silic... -- 1000 MOSFET N-CH 100V 5.6A D2P...
IRF520NS Infineon Tec... -- 1000 MOSFET N-CH 100V 9.7A D2P...
IRF5210STRR Infineon Tec... 0.0 $ 1000 MOSFET P-CH 100V 40A D2PA...
IRF530NS Infineon Tec... -- 1000 MOSFET N-CH 100V 17A D2PA...
IRF530S Vishay Silic... -- 1000 MOSFET N-CH 100V 14A D2PA...
IRF530STRR Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 14A D2PA...
IRF540S Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 28A D2PA...
IRF540STRL Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 28A D2PA...
IRF540STRR Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 28A D2PA...
IRF5305STRR Infineon Tec... 0.0 $ 1000 MOSFET P-CH 55V 31A D2PAK...
IRF530NL Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 17A TO-2...
IRF540NL Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 33A TO-2...
IRF5210L Infineon Tec... 0.0 $ 1000 MOSFET P-CH 100V 40A TO-2...
IRF5305L Infineon Tec... 0.0 $ 1000 MOSFET P-CH 55V 31A TO-26...
IRF530NSTRRPBF Infineon Tec... -- 1000 MOSFET N-CH 100V 17A D2PA...
IRF510L Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 5.6A TO-...
IRF510STRL Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 5.6A D2P...
IRF510STRR Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 5.6A D2P...
IRF520NL Infineon Tec... -- 1000 MOSFET N-CH 100V 9.7A TO-...
IRF520NSTRL Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 9.7A D2P...
IRF520NSTRR Infineon Tec... -- 1000 MOSFET N-CH 100V 9.7A D2P...
IRF520S Vishay Silic... -- 1000 MOSFET N-CH 100V 9.2A D2P...
IRF520STRL Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 9.2A D2P...
IRF520STRR Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 9.2A D2P...
IRF530L Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 14A TO-2...
IRF530STRL Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 14A D2PA...
IRF540L Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 28A TO-2...
IRF5806 Infineon Tec... 0.0 $ 1000 MOSFET P-CH 20V 4A 6-TSOP...
IRF5803 Infineon Tec... 0.0 $ 1000 MOSFET P-CH 40V 3.4A 6-TS...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics