IRF520STRL

IRF520STRL is a 0.8mΩ tall to 60V N-Channel Power MOSFET (Hydrogen Sulfide Resistant Silicon Technology) with low value of on resistance, fast switching speed and excellent avalanche, ESD and EMI performances. It is suitable for use in high frequency switching power supplies, DC/DC converters, portable devices, notebook computers and automotive applications.

Application Field of IRF520STRL

IRF520STRL can be utilized for many applications, for example:

• High frequency switching power supplies
• DC/DC converters
• Portable devices
• Notebook computers
• Automotive applications

Working Principle

The structure of IRF520STRL is a three-terminal power MOSFET composed of an N-type channel semiconductor layer, gate and source and drain electrodes. There are two major types of IRF520STRL, namely, p-channel and n-channel. The working principle of both types is the same, wherein a voltage applied to the gate controls the current that passes through the source-drain channel. When voltage is applied to the gate, electrons inside the channel are attracted to the gate electrode, which forms a narrow and low-resistance channel or a “channel of electrons” between the source and drain.

During the process of electron conduction, the electrons in the channel become excited and form a conducting path, thus allowing electric conduction between the source and drain with minimal resistance. When the voltage applied to the gate is removed, the electron conduction path breaks down, no current is allowed to flow, and the MOSFET is turned off.

The conduction loss of IRF520STRL is quite low because the source-drain voltage is not applied directly. Additionally, the ON resistance of IRF520STRL is also quite low, and it also has a low turn-on and turn-off time, making it ideal for fast switching applications. Another feature of IRF520STRL that makes it highly attractive for use in various applications is its excellent avalanche, ESD and EMI performances.