Allicdata Part #: | IRF5852-ND |
Manufacturer Part#: |
IRF5852 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 20V 2.7A 6-TSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 2.7A 960mW Sur... |
DataSheet: | IRF5852 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 15V |
Power - Max: | 960mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-TSOP |
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The IRF5852 is a Field Effect Transistor (FET) commonly utilised in amplifier and power management applications.
FETs are three-terminal solid-state semiconductor devices that act as electronically controlled switches which, when activated, allow current to flow between a gate and a drain terminal. FETs are used as signal modulation and current regulation devices, and are capable of performing simple operations such as addition, subtraction and multiplication. As they consume very low power, they are favoured in applications that require battery-powered operation, including mobile phones and portable media players.
The IRF5852 is a low voltage, easily passivated, N and P channel industry standard dual FET. It is constructed from silicon and is available as an 8 leaded, quad flat no-lead (QFN) package. It features a 0.52mm spacing and 4x4mm body size, enabling the FET to fit in a very small footprint. It has a maximum continuous drain current of 57A and a drain-source breakdown voltage greater than 600V.
One benefit of the IRF5852 is that it can be used in a variety of applications, ranging from power management to motor control. It is particularly useful in audio amplifiers, where its low on-resistance and fast switching speeds serve to reduce amplifier noise and distortion. It also has excellent temperature performance, making it ideal for use in temperature-sensitive applications such as communications systems, where it can help to maintain signal integrity even in high temperature environments.
The IRF5852 boasts a very high input capacitance, which is vital for power management applications. The FET operates on a drain-based principle, meaning it requires a small voltage input to switch from on to off. This voltage can be as low as 0.3V, making it ideal for use in low-power applications. Given this, the IRF5852 is a popular choice for use in battery operated devices such as mobile phones or tablets.
The IRF5852 is also used in motor control applications, where its high frequency response is useful for controlling motors with high speed performance. It is particularly suited to applications that require fast switching times, as its low on-resistance and high current capacity capabilities make it ideal for controlling high-speed motors.
Overall, the IRF5852 is an excellent FET for use in both power management and motor control applications. It features a small footprint and low voltage operation, making it especially suited to low-power and temperature-sensitive applications. It is very popular in audio amplifier applications thanks to its low on-resistance and fast switching speeds, making it an ideal choice for noise and distortion reduction. Meanwhile, its high input capacitance and fast switching capabilities make it ideal for use in motor control applications.
The specific data is subject to PDF, and the above content is for reference
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