IRF5305STRR Allicdata Electronics
Allicdata Part #:

IRF5305STRR-ND

Manufacturer Part#:

IRF5305STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 55V 31A D2PAK
More Detail: P-Channel 55V 31A (Tc) 3.8W (Ta), 110W (Tc) Surfac...
DataSheet: IRF5305STRR datasheetIRF5305STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF5305STRR is a single N-channel MOSFET produced by International Rectifier, a division of Infineon Technologies. It is designed for use in a variety of applications including high frequency switching, motor control and power supply regulation. The IRF5305STRR is available in TO-220AB and SMDU Low Profile packages.

Applications of the IRF5305STRR

The IRF5305STRR is well-suited for applications such as high frequency switching and motor control. It has several features which make it an excellent choice for these applications, including a high current capability, high switching speed, and low thermal resistance. It is also suitable for use in power supply regulation, as it has a low on-state resistance and can handle large amounts of input power. The IRF5305STRR is also well-suited for use in high-side and low-side switching applications due to its low leakage current and high input capacitance.

Working Principle of the IRF5305STRR

The IRF5305STRR is an N-channel metal–oxide–semiconductor field-effect transistor (MOSFET). It is an enhancement-mode device, which means that it functions as an electronic switch. When the gate-to-source voltage is low, the device acts as an insulator, blocking current flow from the source to the drain. When the gate-to-source voltage is high, the device acts as a conductor, allowing current to flow from the source to the drain. This makes the device suitable for use as a switch in a variety of applications.

The IRF5305STRR is designed for operation at high frequencies. The gate capacitance is minimized, allowing it to switch quickly from off to on and from on to off. The device also has a low on-state resistance, allowing it to handle large amounts of input power. The device also has a high Pulsed Current rating, allowing it to handle high current spikes without damage.

The IRF5305STRR also features a low thermal resistance, which makes it well-suited for use in applications where heat dissipation is a concern. The device has a low junction-to-case thermal resistance, meaning that most of the heat generated in the device is dissipated through the package. This makes the device suitable for use in high-temperature applications.

Conclusion

The IRF5305STRR is a single N-channel MOSFET produced by International Rectifier, a division of Infineon Technologies. It is designed for use in high frequency switching, motor control, and power supply regulation applications. The device has several features which make it well-suited for these applications, including a high current capability, high switching speeds, low thermal resistance, and a low on-state resistance. The device also has a high Pulsed Current rating, allowing it to handle large current spikes without damage.

The IRF5305STRR is an excellent choice for applications where high frequency switching, motor control, and power supply regulation are required. Its low thermal resistance and low gate capacitance make it well-suited for these applications. The device is also suitable for use in high-side and low-side switching applications due to its low leakage current and high input capacitance.

The specific data is subject to PDF, and the above content is for reference

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