Allicdata Part #: | IRF530NS-ND |
Manufacturer Part#: |
IRF530NS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 17A D2PAK |
More Detail: | N-Channel 100V 17A (Tc) 3.8W (Ta), 70W (Tc) Surfac... |
DataSheet: | IRF530NS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF530NS is a MOSFET (metal-oxide-semiconductor field-effect transistor) that can be used in a variety of applications. It is a relatively simple and low-cost device with many uses, including power switching and amplifying. The physical construction of this type of transistor is quite different from other types of transistors, and its working principle is also quite different. This article will discuss the application field and working principle of the IRF530NS.
IRF530NS Application Field
The IRF530NS is a versatile device that can be used in many areas. It is typically used as a power switch, meaning it can be used to switch high-power electrical signals. The transistor can also be used as an amplifier or as a part of a logic gate or logic circuit. Additionally, the IRF530NS can be used to control motors, lighting, and other devices, as well as for analog signal processing.
The most common application for this device is as a power switch. This can be used to turn electrical signals on and off, allowing a large current or voltage to flow quickly and smoothly. The transistor can also be used as an amplifier. When used in this way, it amplifies input signals and allows them to be easily controlled.
This transistor can also be used in logic circuits and logic gates. When used in this way, the IRF530NS can be used to control the logic of a circuit. This allows for more complex logic to be implemented with the transistor. Lastly, the transistor can be used for analog signal processing. This allows the user to manipulate electrical signals in a more granular fashion, allowing for greater control.
IRF530NS Working Principle
The working principle behind the IRF530NS is quite different from other transistors. This device uses a metal-oxide-semiconductor field-effect transistor (MOSFET) architecture. This type of transistor is composed of a semiconductor material, such as silicon, with a voltage applied to it. When a voltage is applied to the semiconductor, it creates an electric field, which in turn affects the placement of charges in the material, changing the conductivity.
The MOSFET works differently than other transistors because it relies on electric fields to control the flow of electrical current. In comparison to other types of transistors, the MOSFET is typically much smaller and has less of an effect on other components in the circuit. Additionally, the MOSFET is capable of handling higher voltages and currents than other transistors.
The MOSFET is used in many applications due to its superior electrical properties. It is commonly used in power switching applications, such as motor control, lighting control, and amplifiers. Additionally, the MOSFET is used in logic circuits for advanced control and manipulation of signals.
Conclusion
The IRF530NS is a versatile MOSFET transistor that can be used in a wide range of applications. It is typically used as a power switch, but can also be used as an amplifier, as part of a logic gate or circuit, and for analog signal processing. It relies on the metal-oxide-semiconductor field-effect transistor (MOSFET) architecture, which is different from other types of transistors and allows for greater control of electrical signals. The IRF530NS is therefore a popular choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IRF5305L | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 55V 31A TO-26... |
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IRF510L | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.6A TO-... |
IRF510STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRF510STRR | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 5.6A D2P... |
IRF520NL | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 9.7A TO-... |
IRF520NSTRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 9.7A D2P... |
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