IRF5852TRPBF

IRF5852TRPBF Application Field and Working Principle

The IRF5852TRPBF is a power MOSFET array specifically designed for automotive applications. It is a n-channel MOSFET array featuring two drain MOSFETs with a common source, integrated with a logic level gate driver, in a dual in-line package. The IRF5852TRPBF provides an efficient solution for applications requiring DC to DC conversion, such as automotive starters, DC-DC converters and motor drives.

The IRF5852TRPBF has two N-channel MOSFETs, each with a drain source RDS(ON) of 0.7 ohm and a SNMPG of 18 A. The device also features integrated logic level gate driver, which reduces the number of external components and eliminates the need for external gate drive circuit, saving valuable board space. Additionally, the device has a maximum breakdown voltage of 100 V, a low gate charge of 8.7 nC, and a total gate charge of 17.4 nC, making it suitable for high-frequency operations.

Working Principle

The IRF5852TRPBF operates on the principle of "channel enhancement" which enables it to function as an efficient power switch. A MOSFET is composed of a metal oxide semiconductor (MOS) structure and an electrical terminals (called the Drain, Source, and Gate). When a voltage is applied to the gate of the MOSFET, a current known as "channeling" is generated, which flows through the structure, creating a channel between the Source and Drain. This channel can be used to switch on and off the power supply, controlling the application load.

The IRF5852TRPBF, in addition to the logic level gate driver, also has ESD protection. This protects the MOSFET from potential electrostatic discharge that can damage the device or cause unexpected output characteristics. The device also has an efficient thermal resistance of 28°C/W, which enhances its ability to handle the heat generated during operations without excessively increasing the device\'s temperature.

Conclusion

To sum up, the IRF5852TRPBF is a power MOSFET array specifically designed for automotive applications. It is highly efficient and features integrated logic level gate driver and ESD protection, along with a low gate charge and low total gate charge, making it suitable for high frequency operations. Moreover, the device has an efficient thermal resistance of 28°C/W, which improves its ability to dissipate heat while in operation.