IRF5804

IRF5804 is a insulated gate field effect transistor (IGFET) manufactured by IR and is part of their UltralMOS 7 series, designed for both low- side and high-side power switching applications. This current-controlled device is commonly used for switching loads up to 400V, such as in the power distribution in motor control, HVAC, consumer electronics and lighting, among others.

IRF5804 Features

The IRF5804 is a depletion-mode power MOSFET which features a breakdown voltage of 600 V, an on-resistance of 3.7 mΩ, a body diode reverse recovery time of 10ns and a maximum current of 8A. This 200mW device is offered in a TO-220 package, giving it a small overall size for a wide variety of applications. It also has a low thermal resistance of 1.1K/W and a high avalanche current rating of 8A. Along with its UL and TUV certifications, the IRF5804 is suitable for use in a variety of high power applications and can provide superior load current handling compared to other power MOSFETs.

IRF5804 Application Field

The IRF5804 is suitable for use in high power applications such as DC/DC converters, high voltage switching power supplies, DC motor speed control, DC servo motors and stepper motors, as well as lighting ballasts, general-purpose DC switching, and bridge circuits. Additionally, the IRF5804 is used in the power distribution network of consumer electronics, solar energy, HVAC, and motor control systems, among others. Thanks to its wide range of applications, the device is seen as a reliable and cost-efficient solution for both low-side and high-side switching applications.

IRF5804 Working Principle

The IRF5804 is a depletion-mode power MOSFET that is controlled by the gate voltage. In its on-state, the voltage difference between the source and drain is zero and the drain current is determined by the gate voltage. In its off-state, the voltage difference between the source and drain is much greater and the drain current is practically zero. The gate voltage of the IRF5804 determines its on and off states. The IRF5804 also has a body diode which helps reduce power dissipation and reduces the chance of the device being damaged due to inductive load switching. In its forward bias direction, the body diode allows current to flow between the source and drain, while in reverse bias it blocks the current.

Conclusion

The IRF5804 is a high-efficiency insulated gate field effect transistor that offers superior load current handling and is suitable for high power applications. This device is commonly used for switching loads up to 400 V, such as in power distribution networks in motor control, HVAC, consumer electronics and lighting, among others. The IRF5804 depletion-mode power MOSFET is controlled by the gate voltage, with the body diode helping reduce power dissipation and reducing the chance of the device being damaged due to inductive load switching.