| Allicdata Part #: | IRF5805-ND |
| Manufacturer Part#: |
IRF5805 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 30V 3.8A 6-TSOP |
| More Detail: | P-Channel 30V 3.8A (Ta) 2W (Ta) Surface Mount Micr... |
| DataSheet: | IRF5805 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | Micro6™(TSOP-6) |
| Mounting Type: | Surface Mount |
| Power Dissipation (Max): | 2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 511pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 98 mOhm @ 3.8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRF5805 are N-channel enhancement mode MOSFETs. It is a power MOSFET and has many advantages over the P-channel type. They are especially suitable for use in power switching applications in which the DC voltage of the switch remains in the same direction as the input voltage. IRF5805 are very low on-state resistance, and can handle current up to about 3 A. The on-state resistance of a power MOSFET depends upon the Id-Vds characteristics, which may change as the device is used. The device also has a low gate drive power, which is low enough to switch applications with relatively low power requirements.
IRF5805 works by using the gate voltage on its gate terminal to control the current flow in the channel formed between its Drain and Source terminal. It is a static device, meaning that it requires an input signal signal to turn on or off. The gate voltage is allowed to float over time, allowing full-cycle power switching without damaging the device.
The most common application of IRF5805 is as switch mode power supplies (SMPS). Here, the MOSFET acts as a switch which is used to efficiently convert AC mains voltage into low voltage DC power supply. The switching action of the device allows the power supply to be converted into the desired output voltage and current. Another application is in the field of power control. IRF5805 can be used to control current in DC-DC converters, LED lights, motor controllers, etc. It can be used to switch off the power supply for a controlled duration of time which is needed for controlling the power supply.
IRF5805 can also be used for signal amplification. Lower power signals can be amplified and converted into higher power signals. This is done by driving the gate of the IRF5805 with a signal from an amplifier at a higher voltage. The device will then act as an amplifier, with the signal on its gate terminal increasing the current flowing through it, thus amplifying the signal. This is useful for audio applications, where the signal needs to be amplified with low signal power.
In addition to the signal amplification, IRF5805 can also be used as an effective linear regulator. In this application, the current is regulated by adjusting the voltage present at the drain. This voltage is adjusted by the voltage applied to the gate of the device. Therefore, the output current can be regulated with no additional components. This makes IRF5805 a very efficient linear regulator for controlling the current in various switching applications.
In conclusion, IRF5805 is essential for managing and controlling the current flow in a variety of applications. Its low on-state resistance and low gate drive power makes it the ideal choice for power switching applications and amplifying signals. It is also an effective linear regulator, as it allows current to be regulated with no additional components.
The specific data is subject to PDF, and the above content is for reference
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IRF5805 Datasheet/PDF