IRF530L

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	670pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	160 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	14A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRF530L Application Field and Working PrincipleIRF530L is a high current, low gate threshold voltage, low on-state resistance, N-channel low power MOSFETs that has been designed for fast switching and low on-state resistance applications. It is suitable for a variety of applications such as power-switching applications, portable devices and automotive systems. The device is also easily driven by digital circuits. In this article, we will look at its application fields and working principle.Application FieldsIRF530L has many different applications such as switching and regulating power in DC/DC converters, power amplifiers and audio amplifiers, power switching in automotive systems, portable devices and computers, and in switching mode power supplies (SMPS). The device is suitable for for voltage range between 10 to 50V, making it a versatile choice for use in many different electronic applications and circuits.Additionally, it can be used in a wide range of power modes due to its low on-state resistance and high breakdown voltage rating. It is quite useful as a low-side switch, since it has a low threshold voltage allowing for low current levels to be switched.Working PrincipleThe IRF530L is an N-channel MOSFET, which is composed of a source, a gate, and a drain. The source is where electrons come from and the drain is where they go. The gate controls the flow of electrons. When a voltage is applied to the gate, the electric field between the gate and the source pulls the electrons off the source and into the drain. The MOSFET is, therefore, functioning as a conducting channel. When the voltage applied to the gate is increased and the source-gate voltage becomes greater than the threshold voltage, the electrons flow from the source to the drain, carrying current with them. This allows the MOSFET to become a low-side switch, switching current on and off. The on-state resistance of the MOSFET is determined by the size of the channel. Therefore, the smaller the channel, the lower the on-state resistance. This means that the IRF530L, with its low on-state resistance, is an ideal choice for applications requiring low on-state resistance. It should also be noted that the MOSFETs are highly temperature dependent, so proper heat dissipation must be taken into consideration in the design of the circuit. ConclusionThe IRF530L is a versatile device suitable for many different applications. Its low gate threshold voltage and low on-state resistance make it well suited for many power applications. Its ease of driving makes it ideal for use in digital circuits. Its low voltage range makes it versatile and its low on-state resistance and high breakdown voltage rating make it a good choice for a low-side switch. Care should be taken to ensure good heat dissipation, as the MOSFETs are highly temperature dependent.

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