| Allicdata Part #: | IRF5804TR-ND |
| Manufacturer Part#: |
IRF5804TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 40V 2.5A 6-TSOP |
| More Detail: | P-Channel 40V 2.5A (Ta) 2W (Ta) Surface Mount Micr... |
| DataSheet: | IRF5804TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package: | Micro6™(TSOP-6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 198 mOhm @ 2.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRC5804TR is a single enhancement-mode Field Effect Transistor (FET) used for various applications. It has a maximum drain-source voltage of 40 V and a drain current of 8 A. The IRF5804TR is a 3-terminal device and is capable of switching high load currents with a wide range of impedances.
This FET is commonly used in high-power switching applications, such as pulse generators, lighting, motor control, and rectifiers. Its features, such as its low on-resistance, high breakdown voltage, and fast switching speed, make it highly suitable for high-power applications where fast switching times are essential. It is also suitable for switching current and voltage sources, as well as using the IRF5804TR as a floating switch or buffer.
The working principle of the IRF5804TR depends on the fact that it is an enhancement-mode FET. This means that in its off-state, the FET is completely “locked”. When it is properly biased, the FET will turn on and allow the current to flow. The operational principle of the IRF5804TR is simpler than the operational principle of other MOSFETs, which require an external source to bias the gate.
The power rating of the IRF5804TR is 25 Watts and output current is 8 Amps. Because of its high-drain capability, the IRF5804TR is particularly well-suited for use in applications where the current needs to be switched quickly, such as high-current motor control or power regulation circuits. It is also popular in battery operated applications, such as remote control car starters, as it can be operated directly from the voltage source.
The IRF5804TR is also used in switching power supplies, where its fast switching times can help to reduce the timeframe for transfer of power. It can also be used in power distribution circuits, where its low on-resistance allows for lower power losses, better efficiency, and faster switching speeds. Rather than having to use multiple FETs for high current applications, the IRF5804TR can be used for single-transistor switching due to its high current rating and low on-resistance.
Overall, the IRF5804TR is an ideal device for high power switching applications where speed is of the essence. The device is capable of carrying high currents, switching quickly, and enabling efficient power transfer in battery operated applications, switching power supplies and power distribution circuits. Its 3-terminal design allows for single-transistor switching, which significantly reduces cost and the need for additional components.
The specific data is subject to PDF, and the above content is for reference
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IRF5804TR Datasheet/PDF